Invention Grant
- Patent Title: Multifunctional electrode
- Patent Title (中): 多功能电极
-
Application No.: US14479565Application Date: 2014-09-08
-
Publication No.: US08906736B1Publication Date: 2014-12-09
- Inventor: Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
- Applicant: Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
- Applicant Address: US CA San Jose JP Tokyo US CA Milpitas
- Assignee: Intermolecular, Inc.,Kabushiki Kaisha Toshiba,SanDisk 3D LLC
- Current Assignee: Intermolecular, Inc.,Kabushiki Kaisha Toshiba,SanDisk 3D LLC
- Current Assignee Address: US CA San Jose JP Tokyo US CA Milpitas
- Main IPC: H01L29/02
- IPC: H01L29/02

Abstract:
A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
Public/Granted literature
- US20140374240A1 MULTIFUNCTIONAL ELECTRODE Public/Granted day:2014-12-25
Information query
IPC分类: