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公开(公告)号：US09087978B1
公开(公告)日：2015-07-21
申请号：US14618055
申请日：2015-02-10
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
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公开(公告)号：US20150179935A1
公开(公告)日：2015-06-25
申请号：US14624295
申请日：2015-02-17
发明人： Zhendong Hong , Vidyut Gopal , Imran Hashim , Randall J. Higuchi , Tim Minvielle , Hieu Pham , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.
摘要翻译： 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其包含至少一个硬金属氧化物膜（例如，金属被完全氧化或基本上被氧化 ）和至少一种软金属氧化物膜（例如，金属比硬金属氧化物氧化较少）。 由于软金属氧化物膜比硬金属氧化物膜氧化得更少或更金属，所以软金属氧化物膜的电阻小于硬金属氧化物膜。 在一个实例中，通过利用臭氧作为氧化剂的ALD工艺形成硬质金属氧化物膜，而通过利用水蒸汽作为氧化剂的另一ALD工艺形成软金属氧化物膜。
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公开(公告)号：US08987697B2
公开(公告)日：2015-03-24
申请号：US14252285
申请日：2014-04-14
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
摘要翻译： 本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。 还公开了形成非易失性存储元件的方法。 非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。 氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。 优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。 在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。
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公开(公告)号：US20140374240A1
公开(公告)日：2014-12-25
申请号：US14479565
申请日：2014-09-08
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
摘要翻译： 公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层和与近化学计量的金属氧化物存储层接触的第二电极。 至少一个电极是包含亚化学计量的过渡金属氮化物或氮氧化物的电阻电极，并且电阻率在0.1和10Ω之间; 厘米。 电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。 还公开了用于第二电极的新颖制造方法。
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公开(公告)号：US08906736B1
公开(公告)日：2014-12-09
申请号：US14479565
申请日：2014-09-08
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
摘要翻译： 公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层以及与近化学计量的金属氧化物存储层接触的第二电极。 至少一个电极是包含亚化学计量的过渡金属氮化物或氧氮化物的电阻电极，并且电阻率在0.1和10Ω之间。 电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。 还公开了用于第二电极的新颖制造方法。
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公开(公告)号：US08859328B2
公开(公告)日：2014-10-14
申请号：US14254155
申请日：2014-04-16
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
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公开(公告)号：US09006026B2
公开(公告)日：2015-04-14
申请号：US14466695
申请日：2014-08-22
发明人： Zhendong Hong , Vidyut Gopal , Imran Hashim , Randall J. Higuchi , Tim Minvielle , Hieu Pham , Takeshi Yamaguchi
IPC分类号： H01L21/00 , H01L21/8222 , H01L45/00 , H01L27/24
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.
摘要翻译： 本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。 用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其包含至少一个硬金属氧化物膜（例如，金属被完全氧化或基本上被氧化 ）和至少一种软金属氧化物膜（例如，金属比硬金属氧化物氧化较少）。 由于软金属氧化物膜比硬金属氧化物膜氧化得更少或更金属，所以软金属氧化物膜的电阻小于硬金属氧化物膜。 在一个实例中，通过利用臭氧作为氧化剂的ALD工艺形成硬质金属氧化物膜，而通过利用水蒸汽作为氧化剂的另一ALD工艺形成软金属氧化物膜。
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公开(公告)号：US20130334490A1
公开(公告)日：2013-12-19
申请号：US13971467
申请日：2013-08-20
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
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公开(公告)号：US20140224645A1
公开(公告)日：2014-08-14
申请号：US14254155
申请日：2014-04-16
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.
摘要翻译： 公开了一种非易失性存储元件，其包括第一电极，具有双稳态电阻的近化学计量的金属氧化物存储层和与近化学计量的金属氧化物存储层接触的第二电极。 至少一个电极是包含亚化学计量的过渡金属氮化物或氧氮化物的电阻电极，并且电阻率在0.1和10Ω之间。 电阻电极提供嵌入式限流电阻器的功能，并且还用作用于设置和复位金属氧化物层的电阻状态的氧空位的源极和吸收器。 还公开了用于第二电极的新颖制造方法。
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公开(公告)号：US08704203B2
公开(公告)日：2014-04-22
申请号：US13971467
申请日：2013-08-20
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
摘要翻译： 本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。 还公开了形成非易失性存储元件的方法。 非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。 氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。 优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。 在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。
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