Invention Grant
- Patent Title: Method for producing semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13931525Application Date: 2013-06-28
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Publication No.: US08906746B2Publication Date: 2014-12-09
- Inventor: Takashi Oda , Kosuke Morita , Eiji Toyoda
- Applicant: Nitto Denko Corporation
- Applicant Address: JP Osaka
- Assignee: Nitto Denko Corporation
- Current Assignee: Nitto Denko Corporation
- Current Assignee Address: JP Osaka
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Priority: JP2011-213028 20110928
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/50 ; H01L21/683 ; H01L23/544 ; H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided. The method comprises: preparing a semiconductor chip having a first main surface on which an electroconductive member is formed; preparing a supporting structure in which, over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order; arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to a second main surface of the semiconductor chips opposite to the first main surface; laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips; and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer from the first thermosetting resin layer.
Public/Granted literature
- US20130288428A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2013-10-31
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