For the formation of a stressor on one or more of a source and drain defined on a fin of FINFET semiconductor structure, a method can be employed including performing selective epitaxial growth (SEG) on one or more of the source and drain defined on the fin, separating the fin from a bulk silicon substrate at one or more of the source and drain, and further performing SEG on one or more of the source and drain to form a wrap around epitaxial growth stressor that stresses a channel connecting the source and drain. The formed stressor can be formed so that the epitaxial growth material defining a wrap around configuration connects to the bulk substrate. The formed stressor can increase mobility in a channel connecting the defined source and drain.