Invention Grant
- Patent Title: Method for forming integrated circuits on a strained semiconductor substrate
- Patent Title (中): 在应变半导体衬底上形成集成电路的方法
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Application No.: US13240769Application Date: 2011-09-22
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Publication No.: US08906776B2Publication Date: 2014-12-09
- Inventor: Daniel Bensahel , Aomar Halimaoui
- Applicant: Daniel Bensahel , Aomar Halimaoui
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group PLLC
- Priority: FR1058377 20101014
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L29/78 ; H01L21/18 ; H01L21/3063
Abstract:
A method for forming an electronic circuit on a strained semiconductor substrate, including the steps of: forming, on a first surface of a semiconductor substrate, electronic components defining electronic chips to be sawn; and forming at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.
Public/Granted literature
- US20120094470A1 METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE Public/Granted day:2012-04-19
Information query
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