发明授权
- 专利标题： Photoelectric conversion element and manufacturing method thereof
- 专利标题（中）： 光电转换元件及其制造方法
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申请号： US13235400申请日： 2011-09-18
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公开(公告)号： US08907352B2公开(公告)日： 2014-12-09
- 发明人: Katsuyuki Naito
- 申请人： Katsuyuki Naito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPP2010-237405 20101022
- 主分类号： H01L27/15
- IPC分类号： H01L27/15 ; H01L51/42 ; H01L51/44 ; H01L51/00 ; H01L51/52 ; C23C16/26
摘要：
A photoelectric conversion element in accordance with an embodiment includes a photoelectric conversion layer, a cathode electrode, and an anode electrode. The cathode electrode is arranged on one surface of the photoelectric conversion layer and includes monolayer graphene and/or multilayer graphene in which a portion of carbon atoms is substituted with at least nitrogen atoms. The anode electrode is arranged on the other surface of the photoelectric conversion layer.
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