CATALYST LAYER, MEMBRANE ELECTRODE ASSEMBLY, AND ELECTROCHEMICAL CELL
    2.
    发明申请
    CATALYST LAYER, MEMBRANE ELECTRODE ASSEMBLY, AND ELECTROCHEMICAL CELL 有权
    催化层,膜电极组件和电化学电池

    公开(公告)号:US20130078550A1

    公开(公告)日:2013-03-28

    申请号:US13628649

    申请日:2012-09-27

    IPC分类号: B01J35/10 H01M8/10

    摘要: According to one embodiment, there is provided a catalyst layer containing a catalyst material. The catalyst layer satisfying requirements below: a porosity of 20 to 90% by vol; and a relation R1≧R0×1.2. In the above inequality, R1 represents an alignment ratio of the catalyst layer and R0 represents an alignment ratio of the catalyst material in powder form having a random crystalline plane distribution, and each of the alignment ratios is calculated from a X-ray diffraction spectrum having a diffraction angle 2θ range from 10 to 90 degree measured using Cu-Kα-rays.

    摘要翻译: 根据一个实施方案,提供了含有催化剂材料的催化剂层。 催化剂层满足以下要求:孔隙率为20〜90体积% 关系R1≥R0×1.2。 在上述不等式中,R1表示催化剂层的取向比,R0表示具有无规晶面分布的粉末状的催化剂材料的取向比,并且,由X射线衍射光谱 衍射角2&thetas; 使用Cu-Kα射线测量的范围为10至90度。

    Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same
    3.
    发明授权
    Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same 有权
    非挥发性存储装置及其制造方法,以及存储装置及其制造方法

    公开(公告)号:US07842557B2

    公开(公告)日:2010-11-30

    申请号:US12249688

    申请日:2008-10-10

    IPC分类号: H01L21/82

    摘要: A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

    摘要翻译: 非易失性存储装置包括在基板上沿列方向配置的多个位线21, 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20,其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元,其具有相对于与一条字线35接触的基板相对移动的针51,将与针51接触的字线35设定为选择状态; 以及读出放大器48,通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

    Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same
    4.
    发明授权
    Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same 失效
    非挥发性存储装置及其制造方法,以及存储装置及其制造方法

    公开(公告)号:US07486553B2

    公开(公告)日:2009-02-03

    申请号:US11533648

    申请日:2006-09-20

    IPC分类号: G11C7/00

    摘要: A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

    摘要翻译: 非易失性存储装置包括在基板上沿列方向配置的多个位线21, 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20,其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元,其具有相对于与一条字线35接触的基板相对移动的针51,将与针51接触的字线35设定为选择状态; 以及读出放大器48,通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

    PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF 有权
    相变记忆及其制造方法

    公开(公告)号:US20080293183A1

    公开(公告)日:2008-11-27

    申请号:US12184428

    申请日:2008-08-01

    IPC分类号: H01L45/00

    摘要: Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

    摘要翻译: 即使存储单元的尺寸在相变存储器中减少,各个存储单元的特性可以被设置为大致相等,并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极,设置在第一电极上的导电部分,并且具有至少两个导电体,其具有设置在第一电极上的大致相同的形状,导电体由高电阻膜隔开,高电阻 电阻,设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层,其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。

    Magnetic recording media
    7.
    发明申请
    Magnetic recording media 审中-公开
    磁记录媒体

    公开(公告)号:US20060269795A1

    公开(公告)日:2006-11-30

    申请号:US11441340

    申请日:2006-05-26

    IPC分类号: G11B5/65 B05D5/12

    CPC分类号: G11B5/855

    摘要: A magnetic recording media has a magnetic recording layer including recording track regions including recording cells of magnetic dots arrayed in a down-track direction and forming plural rows in a cross-track direction, and a nonmagnetic layer filled in recesses between the recording cells, and separation regions of a nonmagnetic layer, separating the recording track regions, and a lubricant applied to a surface of the magnetic recording layer, in which grooves are formed on a surface of the nonmagnetic layer in the separation regions so as to be recessed by 2 to 10 nm with respect to a surface of the nonmagnetic layer in the recording track regions, and in which the lubricant is applied to the surface of the magnetic recording layer so as to be filled in the grooves.

    摘要翻译: 磁记录介质具有包括记录磁道区域的记录磁道区域,该记录磁道区域包括沿下行方向排列的磁点的记录单元,并且在横向方向上形成多个行,以及填充在记录单元之间的凹部中的非磁性层,以及 非磁性层的分离区域,分离记录轨道区域以及施加到磁记录层的表面的润滑剂,其中在分离区域中的非磁性层的表面上形成有凹槽,从而凹入2到 相对于记录轨道区域中的非磁性层的表面为10nm,并且其中将润滑剂施加到磁记录层的表面以便填充在凹槽中。

    Liquid crystal display element
    10.
    发明授权
    Liquid crystal display element 失效
    液晶显示元件

    公开(公告)号:US06017465A

    公开(公告)日:2000-01-25

    申请号:US614539

    申请日:1996-03-13

    申请人: Katsuyuki Naito

    发明人: Katsuyuki Naito

    CPC分类号: C09K19/54 G02F1/1334

    摘要: A liquid crystal display element including a pair of substrates each having an electrode, arranged so that the electrodes face to each other, and a liquid crystal layer sandwiched between the pair of substrates and containing a mixture of a low-molecular compound which forms an amorphous phase or which forms a network, and a liquid crystal substance.

    摘要翻译: 一种液晶显示元件,包括一对基板,每个基板具有布置成使得电极彼此面对的电极以及夹在该对基板之间的液晶层,并且包含形成非晶体的低分子化合物的混合物 相或形成网络,以及液晶物质。