Invention Grant
US08907360B2 Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector 有权
具有分布式布拉格反射体的发光二极管芯片及其制造方法以及具有分布式布拉格反射器的发光二极管封装

Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
Abstract:
An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
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