Invention Grant
US08907360B2 Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
有权
具有分布式布拉格反射体的发光二极管芯片及其制造方法以及具有分布式布拉格反射器的发光二极管封装
- Patent Title: Light emitting diode chip having distributed bragg reflector, method of fabricating the same, and light emitting diode package having distributed bragg reflector
- Patent Title (中): 具有分布式布拉格反射体的发光二极管芯片及其制造方法以及具有分布式布拉格反射器的发光二极管封装
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Application No.: US12917937Application Date: 2010-11-02
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Publication No.: US08907360B2Publication Date: 2014-12-09
- Inventor: Chung Hoon Lee , Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
- Applicant: Chung Hoon Lee , Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2009-0109870 20091113; KR10-2010-0013166 20100212
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/46 ; H01L33/60

Abstract:
An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
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