Invention Grant
US08907502B2 Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device 有权
封装层覆盖的半导体元件及其制造方法以及半导体器件

Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device
Abstract:
A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.
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