Invention Grant
- Patent Title: Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device
- Patent Title (中): 封装层覆盖的半导体元件及其制造方法以及半导体器件
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Application No.: US13914231Application Date: 2013-06-10
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Publication No.: US08907502B2Publication Date: 2014-12-09
- Inventor: Yuki Ebe , Hiroyuki Katayama , Ryuichi Kimura , Hidenori Onishi , Kazuhiro Fuke
- Applicant: Nitto Denko Corporation
- Applicant Address: JP Osaka
- Assignee: Nitto Denko Corporation
- Current Assignee: Nitto Denko Corporation
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-147554 20120629; JP2013-015781 20130130
- Main IPC: H01L33/52
- IPC: H01L33/52 ; H01L23/28 ; H01L21/56 ; H01L33/00

Abstract:
A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.
Public/Granted literature
- US20140001657A1 ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, AND SEMICONDUCTOR DEVICE Public/Granted day:2014-01-02
Information query
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