Abstract:
A radio wave absorbing member 1a includes a radio wave absorber 10 and a support 20 having a sheet shape. The radio wave absorber 10 includes a resistive layer 12, a reflective layer 14, and a dielectric layer 13. The reflective layer 14 reflects a radio wave. The dielectric layer 13 is disposed between the resistive layer 12 and the reflective layer 14 in the thickness direction of the reflective layer 14. The support 20 supports the radio wave absorber 10. The support 20 includes a matrix resin 20m and a flame retardant 20p.
Abstract:
A reinforcement sheet for reinforcing a metal plate by adhering to the metal plate includes a core material layer containing a resin and a front layer disposed at one side in a thickness direction of the core material layer. The front layer is obtained by laminating a plurality of unidirectional liber resin composite sheets, and an area ratio of a void in a cross section of a solidified material of the core material layer is 50% or less.
Abstract:
The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (E): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) a specific release agent.
Abstract:
The present invention relates to a lead frame for an optical semiconductor device including: a lead frame having a first plate part and a second plate part disposed so as to oppose to the first plate part; an optical semiconductor element placed in the second plate part and electrically connected to the second plate part; a wire for electrically connecting the optical semiconductor element and the first plate part to each other; a circumferential reflector formed on the lead frame so as to surround a circumference of the optical semiconductor element; and a transparent resin for encapsulating the optical semiconductor element, filled in a recess formed by the lead frame and an inner periphery of the reflector, in which the lead frame has a contour shape substantially the same as a bottom contour shape of the inner periphery of the reflector for forming the recess.
Abstract:
A composite material and an electromagnetic wave absorber made by molding the same, which are capable of exhibiting an excellent electromagnetic wave absorption function and capable of suppressing the deterioration of mechanical properties of the electromagnetic wave absorber itself. A composite material comprising a single type of thermoplastic resin and a conductive filler contained in a dispersed state in the thermoplastic resin, wherein the composite material includes at least one portion A and a portion B with different conductive filler content percentages in a mixed manner, and wherein the ratio of the conductive filler content percentage in the portion A to the conductive filler content percentage in the portion B is greater than 1.0; and an electromagnetic wave absorber made by molding the same.
Abstract:
An optical semiconductor device includes a metal lead frame including first and second plate portions, an optical semiconductor element mounted on the metal lead frame, and a reflector provided around the optical semiconductor element. A material for the reflector is an epoxy resin composition containing: (A) an epoxy resin; (B) a curing agent; (C) a white pigment; (D) an inorganic filler; and (E) at least one of a carboxylic acid and water. Components (C) and (D) are present in a total proportion of 69 to 94 wt % based on the amount of the overall epoxy resin composition, and the component (E) is present in a proportion of 4 to 23 mol % based on the total amount of the components (B) and (E). The resin composition has a higher glass transition temperature, and is excellent in moldability and blocking resistance and substantially free from warpage.
Abstract:
An element-connecting board is a lead frame for allowing a light emitting diode element to be connected to one side thereof in a thickness direction. The element-connecting board includes the lead frame which is provided with a plurality of leads disposed with spaces from each other and a first insulating resin portion which is light reflective and fills the spaces.
Abstract:
A reinforcement structure includes an adherend, such as a metal plate, and a reinforcement sheet adhering thereto. The reinforcement sheet includes a front layer containing a plurality of fibers, a core material layer, and an adhesive layer. The reinforcement structure is capable of intensively reinforcing a first corner portion of the adherend and obtaining an improvement in strength.
Abstract:
A radio wave absorbing member 1a includes a radio wave absorber 10 and a support 20 having a sheet shape. The radio wave absorber 10 includes a resistive layer 12, a reflective layer 14, and a dielectric layer 13. The reflective layer 14 reflects a radio wave. The dielectric layer 13 is disposed between the resistive layer 12 and the reflective layer 14 in the thickness direction of the reflective layer 14. The support 20 supports the radio wave absorber 10. The support 20 includes a matrix resin 20m and a flame retardant 20p.
Abstract:
A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board; disposing a semiconductor element at one side in a thickness direction of the support sheet; disposing an encapsulating layer formed from an encapsulating resin composition containing a curable resin at the one side in the thickness direction of the support sheet so as to cover the semiconductor element; curing the encapsulating layer to encapsulate the semiconductor element by the encapsulating layer that is flexible; cutting the encapsulating layer that is flexible corresponding to the semiconductor element to produce an encapsulating layer-covered semiconductor element; and peeling the encapsulating layer-covered semiconductor element from the support sheet.