发明授权
- 专利标题： Lithographic apparatus and device manufacturing method to determine improved absolute position of exposure fields using mark structures
- 专利标题（中）： 使用标记结构确定改善的曝光场绝对位置的光刻设备和器件制造方法
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申请号： US12621143申请日： 2009-11-18
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公开(公告)号： US08908152B2公开(公告)日： 2014-12-09
- 发明人: Franciscus Godefridus Casper Bijnen , Jozef Cornelis Antonius Roijers , Patrick Warnaar , Marc Van Kemenade , Hoite Pieter Theodoor Tolsma
- 申请人： Franciscus Godefridus Casper Bijnen , Jozef Cornelis Antonius Roijers , Patrick Warnaar , Marc Van Kemenade , Hoite Pieter Theodoor Tolsma
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： G03B27/32
- IPC分类号： G03B27/32 ; G03F9/00
摘要：
A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.
公开/授权文献
- US20100123886A1 Lithographic Apparatus and Device Manufacturing Method 公开/授权日：2010-05-20
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