Invention Grant
US08911559B2 Method to pre-heat and stabilize etching chamber condition and improve mean time between cleaning
有权
预热和稳定蚀刻室条件并提高清洁之间的平均时间的方法
- Patent Title: Method to pre-heat and stabilize etching chamber condition and improve mean time between cleaning
- Patent Title (中): 预热和稳定蚀刻室条件并提高清洁之间的平均时间的方法
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Application No.: US12463243Application Date: 2009-05-08
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Publication No.: US08911559B2Publication Date: 2014-12-16
- Inventor: Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- Applicant: Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B08B5/00
- IPC: B08B5/00 ; B08B7/04 ; H01J37/32
Abstract:
A method for cleaning an etching chamber is disclosed. The method comprises providing an etching chamber; introducing a first gas comprising an inert gas into the etching chamber for a first period of time; and transporting a first wafer into the etching chamber after the first period of time, wherein the first wafer undergoes an etching process.
Public/Granted literature
- US20100071719A1 METHOD TO PRE-HEAT AND STABILIZE ETCHING CHAMBER CONDITION AND IMPROVE MEAN TIME BETWEEN CLEANING Public/Granted day:2010-03-25
Information query
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