发明授权
US08911559B2 Method to pre-heat and stabilize etching chamber condition and improve mean time between cleaning
有权
预热和稳定蚀刻室条件并提高清洁之间的平均时间的方法
- 专利标题： Method to pre-heat and stabilize etching chamber condition and improve mean time between cleaning
- 专利标题（中）： 预热和稳定蚀刻室条件并提高清洁之间的平均时间的方法
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申请号： US12463243申请日： 2009-05-08
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公开(公告)号： US08911559B2公开(公告)日： 2014-12-16
- 发明人: Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- 申请人： Yu Chao Lin , Ryan Chia-Jen Chen , Yih-Ann Lin , Jr Jung Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： B08B5/00
- IPC分类号： B08B5/00 ; B08B7/04 ; H01J37/32
摘要：
A method for cleaning an etching chamber is disclosed. The method comprises providing an etching chamber; introducing a first gas comprising an inert gas into the etching chamber for a first period of time; and transporting a first wafer into the etching chamber after the first period of time, wherein the first wafer undergoes an etching process.
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