发明授权
- 专利标题： Nonvolatile semiconductor memory device including silicon germanium semiconductor layer
- 专利标题（中）： 包括硅锗半导体层的非易失性半导体存储器件
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申请号： US13560260申请日： 2012-07-27
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公开(公告)号： US08912594B2公开(公告)日： 2014-12-16
- 发明人: Jun Fujiki , Yoshiaki Fukuzumi , Hideaki Aochi
- 申请人： Jun Fujiki , Yoshiaki Fukuzumi , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-051028 20120307
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115 ; H01L27/105
摘要：
According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body, a second insulating layer, a select gate, a memory hole, a memory film, a channel body, a first semiconductor layer, and a second semiconductor layer. The select gate is provided on the second insulating layer. The memory film is provided on an inner wall of the memory hole. The channel body is provided inside the memory film. The first semiconductor layer is provided on an upper surface of the channel body. The second semiconductor layer is provided on the first semiconductor layer. The first semiconductor layer contains silicon germanium. The second semiconductor layer contains silicon germanium doped with a first impurity. A boundary between the first semiconductor layer and the second semiconductor layer is provided above a position of an upper end of the select gate.
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