发明授权
- 专利标题： Dual port memory cell
- 专利标题（中）： 双端口存储单元
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申请号： US13953390申请日： 2013-07-29
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公开(公告)号： US08913455B1公开(公告)日： 2014-12-16
- 发明人: Rafael C. Camarota
- 申请人： Xilinx, Inc.
- 申请人地址： US CA San Jose
- 专利权人： Xilinx, Inc.
- 当前专利权人： Xilinx, Inc.
- 当前专利权人地址： US CA San Jose
- 代理商 LeRoy D. Maunu
- 主分类号： G11C8/00
- IPC分类号： G11C8/00 ; G11C7/10 ; G11C11/00 ; H01L21/8238 ; G11C11/412
摘要：
A multi-port memory cell is disclosed that includes first and second cross-coupled inverter circuits. The input node of each inverter circuit is coupled to the output node of the other inverter circuit to receive the inverted output of the other inverter circuit. The multi-port memory cell includes a first pair of access transistors of a first type, each coupled to the input node of a respective one of the first and second inverter circuits. The multi-port memory cell also includes a second pair of access transistors of the second type, each coupled to the input of a respective one of the first and second inverter circuits. The multi-port cell exhibits advantages in layout compactness and SEU tolerance.
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