发明授权
US08916921B2 Non-volatile semiconductor storage device including a dielectric with low permittivity in memory cells arranged in a three dimensional manner
有权
非易失性半导体存储装置，其包括以三维方式布置的存储单元中的介电常数低的介质
- 专利标题： Non-volatile semiconductor storage device including a dielectric with low permittivity in memory cells arranged in a three dimensional manner
- 专利标题（中）： 非易失性半导体存储装置，其包括以三维方式布置的存储单元中的介电常数低的介质
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申请号： US12705088申请日： 2010-02-12
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公开(公告)号： US08916921B2公开(公告)日： 2014-12-23
- 发明人: Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Yoshiaki Fukuzumi , Yosuke Komori , Megumi Ishiduki
- 申请人： Hiroyasu Tanaka , Hideaki Aochi , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Yoshiaki Fukuzumi , Yosuke Komori , Megumi Ishiduki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-032697 20090216
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115 ; G11C16/04
摘要：
A plurality of a first conductive layers are provided at a certain interval L in a vertical direction, with a dielectric sandwiched therebetween. The certain interval L is set so that the first dielectric has an equivalent oxide thickness DEOT that satisfies the following relation (1). Dsio2
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