发明授权
- 专利标题: Device and method for testing semiconductor device
- 专利标题(中): 半导体器件测试装置及方法
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申请号: US13198879申请日: 2011-08-05
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公开(公告)号: US08917103B2公开(公告)日: 2014-12-23
- 发明人: Koichi Morino , Kouichi Ikeda
- 申请人: Koichi Morino , Kouichi Ikeda
- 申请人地址: JP Tokyo
- 专利权人: Ricoh Company, Ltd.
- 当前专利权人: Ricoh Company, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Cooper & Dunham LLP
- 优先权: JP2010-178442 20100809
- 主分类号: G01R31/10
- IPC分类号: G01R31/10 ; G01R31/02 ; H01L35/00 ; G01R31/28
摘要:
A testing method for testing a semiconductor device includes heating the semiconductor device until the temperature of the semiconductor device reaches a predetermined temperature; conducting other functional tests other than testing of the overheat protection function in a second step after the temperature of the semiconductor device has reached the predetermined temperature; allowing the semiconductor device to generate heat by itself such that the overheat protection function of the semiconductor device is activated, detecting a first diode forward voltage of a desired diode contained in the semiconductor device when the overheat protection function of the semiconductor device is activated and computing a first computational temperature of the semiconductor device based on the detected first diode forward voltage of the desired diode contained in the semiconductor device; and determining whether the computed first computational temperature of the semiconductor device resides in the overheat protection function activating temperature range.
公开/授权文献
- US08860445B2 Device and method for testing semiconductor device 公开/授权日:2014-10-14