发明授权
US08917378B2 Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area 有权
曝光方法,曝光装置和具有多个投影光学系统的装置的制造方法以及具有第一部分图案区域的图案和具有第一部分图案区域的覆盖区域的第二局部区域

  • 专利标题: Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area
  • 专利标题(中): 曝光方法,曝光装置和具有多个投影光学系统的装置的制造方法以及具有第一部分图案区域的图案和具有第一部分图案区域的覆盖区域的第二局部区域
  • 申请号: US12261741
    申请日: 2008-10-30
  • 公开(公告)号: US08917378B2
    公开(公告)日: 2014-12-23
  • 发明人: Kei Nara
  • 申请人: Kei Nara
  • 申请人地址: JP Tokyo
  • 专利权人: Nikon Corporation
  • 当前专利权人: Nikon Corporation
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
  • 主分类号: G03B27/54
  • IPC分类号: G03B27/54 G03F7/20
Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area
摘要:
A method for exposing a substrate includes arranging, in a direction, pattern areas to projection systems respectively arranged at an interval and each having a magnifying magnification, the pattern areas having area widths each smaller than the interval and greater than a width obtained by dividing an exposure width of the projection system by the magnifying magnification; and successively transferring onto the substrate an image, projected by an associated projection system, of a first pattern provided in a first partial pattern area in each pattern area and an image, projected by the associated projection system, of a second pattern provided in a second partial pattern area in each pattern area and having at least a partial area different from the first partial pattern area in the direction in each pattern area. The occurrence of any stitch error is suppressed and the transfer accuracy is improved.
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