Invention Grant
- Patent Title: Test circuit, memory system, and test method of memory system
- Patent Title (中): 存储系统的测试电路,存储系统和测试方法
-
Application No.: US13603597Application Date: 2012-09-05
-
Publication No.: US08918685B2Publication Date: 2014-12-23
- Inventor: Hyung-Gyun Yang , Hyung-Dong Lee , Yong-Kee Kwon , Young-Suk Moon , Hong-Sik Kim
- Applicant: Hyung-Gyun Yang , Hyung-Dong Lee , Yong-Kee Kwon , Young-Suk Moon , Hong-Sik Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0026508 20120315
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
This technology relates to smoothly performing a test on a memory circuit having a high memory capacity while reducing the size of a test circuit. A test circuit according to the present invention includes a test execution unit configured to perform a test on a target test memory circuit, an internal storage unit configured to store data for the test execution unit, and a conversion setting unit configured to set a part of or the entire storage space of the target test memory circuit as an external storage unit for storing the data for the test execution unit.
Public/Granted literature
- US20130246867A1 TEST CIRCUIT, MEMORY SYSTEM, AND TEST METHOD OF MEMORY SYSTEM Public/Granted day:2013-09-19
Information query