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发明授权
US08920944B2 Use of a precursor of an N-dopant for doping an organic semiconductive material, precursor and electronic or optoelectronic component 有权
使用N-掺杂剂的前体掺杂有机半导体材料，前体和电子或光电子部件

Use of a precursor of an N-dopant for doping an organic semiconductive material, precursor and electronic or optoelectronic component
摘要：
Use of a precursor of an n-dopant for doping an organic semiconductive material, as a blocking layer, as a charge injection layer, as an electrode material, as a storage material or as a semiconductor material itself in electronic or optoelectronic components, the precursor being selected from the following formulae 1-3c:
摘要（中）：

在电子或光电子部件中使用作为电荷注入层的有机半导体材料，作为电极材料，作为储存材料或作为半导体材料本身的有机半导体材料的前体， 选自下式1-3c：

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