Invention Grant
- Patent Title: Method for fabricating trench isolation structure
- Patent Title (中): 沟槽隔离结构的制作方法
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Application No.: US12962655Application Date: 2010-12-08
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Publication No.: US08921183B2Publication Date: 2014-12-30
- Inventor: Jen-Jui Huang , Hung-Ming Tsai
- Applicant: Jen-Jui Huang , Hung-Ming Tsai
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/76 ; H01L21/762
Abstract:
A method for fabricating a trench isolation structure is described. A trench is formed in a substrate. A liner layer is formed at least in the trench. A precursor layer is formed at least on the sidewalls of the trench. The precursor layer is converted to an insulating layer that has a larger volume than the precursor layer and fills up the trench.
Public/Granted literature
- US20120149172A1 METHOD FOR FABRICATING TRENCH ISOLATION STRUCTURE Public/Granted day:2012-06-14
Information query
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