发明授权
- 专利标题： Elongated bumps in integrated circuit devices
- 专利标题（中）： 集成电路设备中的延长凸块
-
申请号： US13559840申请日： 2012-07-27
-
公开(公告)号： US08922006B2公开(公告)日： 2014-12-30
- 发明人: Yen-Liang Lin , Chen-Shien Chen , Tin-Hao Kuo , Sheng-Yu Wu , Tsung-Shu Lin , Chang-Chia Huang
- 申请人： Yen-Liang Lin , Chen-Shien Chen , Tin-Hao Kuo , Sheng-Yu Wu , Tsung-Shu Lin , Chang-Chia Huang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/488
- IPC分类号： H01L23/488
摘要：
A device includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. The passivation layer has a first opening overlapping the metal pad, wherein the first opening has a first lateral dimension measured in a direction parallel to a major surface of the substrate. A polymer layer is over the passivation layer and covering the edge portions of the metal pad. The polymer layer has a second opening overlapping the metal pad. The second opening has a second lateral dimension measured in the direction. The first lateral dimension is greater than the second lateral dimension by more than about 7 μm. A Under-Bump metallurgy (UBM) includes a first portion in the second opening, and a second portion overlying portions of the polymer layer.
公开/授权文献
- US20130256874A1 Elongated Bumps in Integrated Circuit Devices 公开/授权日：2013-10-03
信息查询
IPC分类:
