发明授权
- 专利标题： Tunneling magneto-resistive sensors with buffer layers
- 专利标题（中）： 隧道磁阻传感器与缓冲层
-
申请号： US13152860申请日： 2011-06-03
-
公开(公告)号： US08922956B2公开(公告)日： 2014-12-30
- 发明人: Bin Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
- 申请人： Bin Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
- 申请人地址： US MN Minneapolis
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US MN Minneapolis
- 代理机构： Mueting, Raasch & Gebhardt, P.A.
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; G01R33/09
摘要：
In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
公开/授权文献
- US20110298456A1 TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS 公开/授权日：2011-12-08