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9 条记录 (耗时 0.012 秒)

    Ampere wire write head with confined magnetic fields
    1.
    发明申请
    Ampere wire write head with confined magnetic fields 有权
    安培有线写磁头与限制磁场

    公开(公告)号：US20050280935A1

    公开(公告)日：2005-12-22

    申请号：US10869444

    申请日：2004-06-16

    申请人： Thomas Clinton ,  Petrus van der Heijden ,  Michael Seigler ,  Mark Covington ,  Werner Scholz ,  Sharat Batra

    发明人： Thomas Clinton ,  Petrus van der Heijden ,  Michael Seigler ,  Mark Covington ,  Werner Scholz ,  Sharat Batra

    IPC分类号： G11B5/127 ,  G11B5/187

    CPC分类号： G11B5/315 ,  G11B5/127 ,  G11B5/187

    摘要： A magnetic recording head comprises a write pole having a tip adjacent to an air bearing surface of the recording head, a return pole magnetically coupled to the write pole, a conductor positioned adjacent to an edge of the write pole at the air bearing surface, a first conductive heat sink connected to the conductor, and a second conductive heat sink connected to the conductor, wherein at least a portion of each of the first and second conductive heat sinks is positioned adjacent to the air bearing surface and wherein each of the first and second conductive heat sinks includes a structure for augmenting confinement of a magnetic write field adjacent to the write pole. Magnetic storage devices that include the magnetic recording head are also included.

    摘要翻译： 磁记录头包括具有与记录头的空气轴承表面相邻的尖端的写入磁极，磁极耦合到写入极的返回磁极，与空气轴承表面上的写入极的边缘相邻定位的导体， 连接到所述导体的第一导电散热器和连接到所述导体的第二导电散热器，其中所述第一和第二导电散热器中的每一个的至少一部分被定位成邻近所述空气轴承表面，并且其中， 第二导电散热器包括用于增加与写入极相邻的磁写入场的约束的结构。 还包括包含磁记录头的磁存储装置。

    Tunneling magneto-resistive sensors with buffer layers
    2.
    发明授权
    Tunneling magneto-resistive sensors with buffer layers 有权
    隧道磁阻传感器与缓冲层

    公开(公告)号：US08922956B2

    公开(公告)日：2014-12-30

    申请号：US13152860

    申请日：2011-06-03

    申请人： Bin Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

    发明人： Bin Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

    IPC分类号： G11B5/39 ,  G01R33/09

    CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02

    摘要： In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    摘要翻译： 在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

    Suppression of spin momentum transfer and related torques in magnetoresistive elements
    3.
    发明申请
    Suppression of spin momentum transfer and related torques in magnetoresistive elements 有权
    抑制磁阻元件中的自旋动量传递和相关转矩

    公开(公告)号：US20060232892A1

    公开(公告)日：2006-10-19

    申请号：US11105133

    申请日：2005-04-13

    申请人： Mark Covington ,  Nils Gokemeijer

    发明人： Mark Covington ,  Nils Gokemeijer

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： An apparatus comprises a ferromagnetic free layer having a first magnetic moment and having a magnetization that rotates in response to an external magnetic field, a first ferromagnetic reference layer positioned adjacent to a first side of the ferromagnetic free layer and having a second magnetic moment that is greater than the first magnetic moment of the ferromagnetic free layer, a second ferromagnetic reference layer positioned adjacent to a second side of the ferromagnetic free layer and having a third magnetic moment that is greater than the first magnetic moment of the ferromagnetic free layer, a first non-magnetic spacer layer positioned between the ferromagnetic free layer and the first ferromagnetic reference layer, a second non-magnetic spacer layer positioned between the ferromagnetic free layer and the second ferromagnetic reference layer, and a source of magnetic field for biasing the first and second ferromagnetic reference layers.

    摘要翻译： 一种装置包括具有第一磁矩并具有响应于外部磁场而旋转的磁化的铁磁自由层，与铁磁自由层的第一侧相邻定位的第一铁磁参考层，并且具有第二磁矩， 大于铁磁自由层的第一磁矩，与铁磁自由层的第二侧相邻并且具有大于铁磁自由层的第一磁矩的第三磁矩的第二铁磁参考层，第一 位于铁磁自由层和第一铁磁参考层之间的非磁性间隔层，位于铁磁性自由层和第二铁磁参考层之间的第二非磁性间隔层，以及用于偏置第一和第二铁磁参考层的磁场源 铁磁参考层。

    TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS
    5.
    发明申请
    TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS 有权
    具有缓冲层的隧道式电磁感应传感器

    公开(公告)号：US20110298456A1

    公开(公告)日：2011-12-08

    申请号：US13152860

    申请日：2011-06-03

    申请人： BIN Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

    发明人： BIN Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

    IPC分类号： G01R33/02

    CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02

    摘要： In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

    摘要翻译： 在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

    Damping control in magnetic recording systems
    7.
    发明申请
    Damping control in magnetic recording systems 有权
    磁记录系统中的阻尼控制

    公开(公告)号：US20070003792A1

    公开(公告)日：2007-01-04

    申请号：US11170035

    申请日：2005-06-29

    申请人： Mark Covington ,  Ganping Ju ,  Werner Scholz ,  Michael Minor

    发明人： Mark Covington ,  Ganping Ju ,  Werner Scholz ,  Michael Minor

    IPC分类号： G11B5/33 ,  G11B5/66

    CPC分类号： G11B5/667 ,  G11B5/1278 ,  G11B5/581 ,  G11B5/6005 ,  Y10T428/115 ,  Y10T428/1186

    摘要： A magnetic recording system is disclosed in which the magnetization dynamics of the write head and recording medium are highly damped. The system may comprise a perpendicular recording head having a write pole, and a recording medium including a hard magnetic recording layer and a soft magnetic underlayer (SUL). The increased magnetic damping in the write pole and SUL suppresses precessional motion of the respective magnetizations, leading to a reduction in transition jitter caused by spurious head field fluctuations. The damping may be increased by providing films or multilayer structures that are doped with rare earth or transition metal elements. Exchange coupled laminates of doped and undoped layers may optimize both the effective damping and write field in the recording system.

    摘要翻译： 公开了一种磁记录系统，其中写头和记录介质的磁化动力学被高度阻尼。 该系统可以包括具有写入极的垂直记录头和包括硬磁记录层和软磁性底层（SUL）的记录介质。 写入磁极和SUL中的增加的磁阻抑制了相应磁化的进动运动，导致由杂散磁头场波动引起的转换抖动的减小。 可以通过提供掺杂有稀土或过渡金属元素的膜或多层结构来增加阻尼。 掺杂和未掺杂层的交换耦合层压板可以优化记录系统中的有效阻尼和写入场。

    Data writing with plasmon resonator
    8.
    发明申请
    Data writing with plasmon resonator 有权
    用等离子体共振器进行数据写入

    公开(公告)号：US20050289577A1

    公开(公告)日：2005-12-29

    申请号：US10879447

    申请日：2004-06-29

    申请人： Michael Seigler ,  Thomas Clinton ,  Mark Covington ,  Christophe Mihalcea

    发明人： Michael Seigler ,  Thomas Clinton ,  Mark Covington ,  Christophe Mihalcea

    IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/127 ,  G11B11/00 ,  G11B17/00

    CPC分类号： B82Y10/00 ,  G11B5/127 ,  G11B7/1387 ,  G11B11/10534 ,  G11B11/10554 ,  G11B2005/0005 ,  G11B2005/0021

    摘要： A data writing system includes an array of cells for storing data and a write transducer that moves over a selected cell in the array of cells. The write transducer includes a writer producing a write magnetic field that intersects the selected cell. The write transducer also includes a plasmon resonator that is adjacent the writer. The plasmon resonator is shaped to receive lower power density radiation and to provide plasmon radiation at a higher power density to an optical spot intersecting with the selected cell. The plasmon radiation heats the selected cell above a write temperature.

    摘要翻译： 数据写入系统包括用于存储数据的单元阵列和在单元阵列中的选定单元上移动的写换能器。 写入传感器包括写入器，其产生与所选择的单元相交的写入磁场。 写入传感器还包括与写入器相邻的等离子体激元谐振器。 等离子体激元谐振器被成形为接收较低的功率密度辐射并且以更高的功率密度提供与所选择的单元相交的光点的等离子体激元辐射。 等离子体激元辐射将选定的电池加热到写入温度以上。

    Suppression of thermally activated magnetization fluctuations in magnetoresistive elements via spin momentum transfer
    9.
    发明授权
    Suppression of thermally activated magnetization fluctuations in magnetoresistive elements via spin momentum transfer 失效
    通过自旋动量传递抑制磁阻元件的热激活磁化波动

    公开(公告)号：US07042685B2

    公开(公告)日：2006-05-09

    申请号：US10671160

    申请日：2003-09-25

    申请人： Mark Covington

    发明人： Mark Covington

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/325

    摘要： A system and method of reducing noise due to thermally activated spin waves in a magnetoresistive (MR) element is disclosed. The MR element includes a free layer, a reference layer, and a spacer layer, the spacer layer being positioned between the free layer and the reference layer. To reduce noise, a magnetization of the reference layer is pinned in a fixed direction. A spin polarized current perpendicular to a plane of the free layer, reference layer, and spacer layer is subsequently produced such that the current exerts a spin momentum transfer torque on localized electron spins to reduce noise due to thermally activated spin waves. The spin momentum transfer torque opposes the intrinsic damping of the free layer, thereby reducing noise in the MR element.

    摘要翻译： 公开了一种在磁阻（MR）元件中降低由热激活自旋波引起的噪声的系统和方法。 MR元件包括自由层，参考层和间隔层，间隔层位于自由层和参考层之间。 为了降低噪声，参考层的磁化被固定在固定方向上。 随后产生垂直于自由层，参考层和间隔层的平面的自旋极化电流，使得电流在局部电子自旋上施加自旋动量传递转矩，以减少由热激活的自旋波引起的噪声。 自旋动量传递转矩与自由层的固有阻尼相反，从而降低MR元件中的噪声。