发明授权
US08923661B2 2-pattern compound photonic crystals with a large, complete photonic band gap
有权
具有大的完整光子带隙的2模式复合光子晶体
- 专利标题: 2-pattern compound photonic crystals with a large, complete photonic band gap
- 专利标题(中): 具有大的完整光子带隙的2模式复合光子晶体
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申请号: US13524455申请日: 2012-06-15
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公开(公告)号: US08923661B2公开(公告)日: 2014-12-30
- 发明人: Lin Jia , Edwin Lorimer Thomas
- 申请人: Lin Jia , Edwin Lorimer Thomas
- 申请人地址: US MA Cambridge
- 专利权人: Massachusetts Institute of Technology
- 当前专利权人: Massachusetts Institute of Technology
- 当前专利权人地址: US MA Cambridge
- 代理机构: MIT Technology Licensing Office
- 代理商 Sam Pasternack
- 主分类号: G02B6/00
- IPC分类号: G02B6/00 ; G02B6/122
摘要:
2-pattern photonic crystal and the associated photonic devices are described here. A 2-pattern photonic crystal has a large, complete photonic band gap. It includes a TM sub-structure providing a large TM photonic band gap superimposed on a TE sub-structure providing a large TE photonic band gap. The resulting 2-pattern photonic crystals have complete photonic band gaps larger than 15%. By altering the respective sub-structures, optical devices for different polarizations (TE, TM or both) can be readily designed, and those optical devices can be integrated on the same plane.
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