Invention Grant
- Patent Title: Material structures for front-end of the line integration of optical polarization splitters and rotators
- Patent Title (中): 光学偏振分离器和旋转器的线路集成前端的材料结构
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Application No.: US13835725Application Date: 2013-03-15
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Publication No.: US08923665B2Publication Date: 2014-12-30
- Inventor: Tymon Barwicz , Douglas M. Gill , William M. Green , Marwan H. Khater , Yurii A. Vlasov
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/126

Abstract:
A polarization splitter and rotator of a wafer chip, an opto-electronic device and method of use is disclosed. The first waveguide of the wafer chip is configured to receive an optical signal from an optical device and propagate a transverse electric eigenstate of the received optical signal. The second waveguide is configured to receive a transverse magnetic eigenstate of the received optical signal from the first waveguide. The second waveguide includes a splitter end, a middle section and a rotator end, wherein the splitter end includes a layer of polycrystalline silicon, a layer of silicon oxide and a layer of silicon nitride, the rotated end includes a layer single crystal silicon, a layer silicon oxide and a layer of silicon nitride, and the middle section includes layers of single crystal silicon, silicon oxide polycrystalline silicon and silicon nitride.
Public/Granted literature
- US20140270628A1 MATERIAL STRUCTURES FOR FRONT-END OF THE LINE INTEGRATION OF OPTICAL POLARIZATION SPLITTERS AND ROTATORS Public/Granted day:2014-09-18
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