发明授权
- 专利标题: Production method of resist composition for lithography
- 专利标题(中): 光刻抗蚀剂组合物的制备方法
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申请号: US13605360申请日: 2012-09-06
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公开(公告)号: US08927192B2公开(公告)日: 2015-01-06
- 发明人: Tsutomu Ogihara , Motoaki Iwabuchi
- 申请人: Tsutomu Ogihara , Motoaki Iwabuchi
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2011-235224 20111026
- 主分类号: B01D35/01
- IPC分类号: B01D35/01 ; G03F7/004 ; G03F7/16 ; B01D36/00
摘要:
A production method of a resist composition for lithography, including, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, the resist composition for lithography is passed through the filter after an interior of a vessel having the filter installed therein is kept under reduced pressure. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
公开/授权文献
- US20130108958A1 PRODUCTION METHOD OF RESIST COMPOSITION FOR LITHOGRAPHY 公开/授权日:2013-05-02
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