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公开(公告)号：US08927192B2
公开(公告)日：2015-01-06
申请号：US13605360
申请日：2012-09-06
申请人： Tsutomu Ogihara , Motoaki Iwabuchi
发明人： Tsutomu Ogihara , Motoaki Iwabuchi
CPC分类号： G03F7/16 , B01D36/001 , G03F7/004
摘要： A production method of a resist composition for lithography, including, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, the resist composition for lithography is passed through the filter after an interior of a vessel having the filter installed therein is kept under reduced pressure. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 用于光刻的抗蚀剂组合物的制造方法至少包括：用于通过其中的过滤器对用于光刻的光刻胶组合物进行过滤的过滤步骤，其中在所述过滤步骤中，用于光刻的抗蚀剂组合物在经过过滤器的内部 将安装有过滤器的容器保持在减压下。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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2.发明授权公开(公告)号：US07855043B2
公开(公告)日：2010-12-21
申请号：US11808100
申请日：2007-06-06
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.
摘要翻译： 由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜 ）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或 锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。
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3.发明授权Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern 有权防反射膜材料和具有抗反射膜的基板和形成图案的方法公开(公告)号：US07163778B2
公开(公告)日：2007-01-16
申请号：US10797201
申请日：2004-03-11
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/0757 , Y10T428/24355
摘要： There is disclosed an anti-reflection film material used in lithography containing at least a polymer compound having repeating units for copolymerization represented by the following general formula (1), or those containing a polymer compound having repeating units for copolymerization represented by the following general formula (2) and a polymer compound having repeating units for copolymerization represented by the following general formula (3). There can be provided an anti-reflection film material which has an excellent reflection preventive effect to exposure at short wavelength, and has high etch selectivity, namely, an etch rate is higher enough than the photoresist film, an etch rate is sufficiently slower than a substrate to be processed, wherein the shape of the resist pattern formed in the photoresist film on the anti-reflection film can be made perpendicular
摘要翻译： 公开了一种用于光刻的抗反射膜材料，其至少包含具有由以下通式（1）表示的用于共聚的重复单元的聚合物化合物，或含有由以下通式表示的共聚重复单元的聚合物化合物 （2）和具有下述通式（3）表示的共聚重复单元的高分子化合物。 可以提供防反射膜材料，其对短波长的曝光具有优异的反射防止效果，并且具有高蚀刻选择性，即蚀刻速率比光致抗蚀剂膜更高，蚀刻速率足够慢于 基板，其中形成在防反射膜上的光致抗蚀剂膜中的抗蚀剂图案的形状可以垂直
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4.发明申请Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device 有权多孔膜形成组合物，组合物的制备方法，多孔膜和半导体器件公开(公告)号：US20050165197A1
公开(公告)日：2005-07-28
申请号：US11041780
申请日：2005-01-24
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
IPC分类号： C04B38/00 , C01B33/12 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/316 , H01L21/768 , C08G77/20
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.
摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并添加交联性抑制剂以暂时终止交联性的步骤; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。
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公开(公告)号：US20130108957A1
公开(公告)日：2013-05-02
申请号：US13604270
申请日：2012-09-05
申请人： Motoaki Iwabuchi , Tsutomu Ogihara
发明人： Motoaki Iwabuchi , Tsutomu Ogihara
CPC分类号： G03F7/004 , B01D37/025 , G03F7/075 , G03F7/16
摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，将胶态溶胶从 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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6.发明授权公开(公告)号：US07910283B2
公开(公告)日：2011-03-22
申请号：US11595941
申请日：2006-11-13
CPC分类号： C08G77/48 , C09D183/14 , G03F7/091
摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.
摘要翻译： 用于形成抗光反射涂层的组合物，其用于使用高达200nm的曝光的光刻工艺，包括通过具有下式的含硅 - 硅键的硅烷化合物水解缩合获得的含硅聚合物：R（6-m） Si2Xm，其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得 可以高精度地处理基板。
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7.发明授权公开(公告)号：US07678529B2
公开(公告)日：2010-03-16
申请号：US11594176
申请日：2006-11-08
CPC分类号： G03F7/0752 , G03F7/0757 , G03F7/094 , G03F7/11 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.
摘要翻译： 多层抗蚀剂工艺包括在可图案化衬底上依次形成底涂层，中间膜和光致抗蚀剂膜，并且在多个阶段中进行蚀刻。 含硅的成膜组合物可用于形成用作蚀刻掩模的中间膜，其包含通过至少一种含Si-Si键的硅烷化合物的水解缩合而得到的含硅聚合物，其具有下式：R（6-m ）Si 2 X m其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组合物允许将上覆的光致抗蚀剂膜图案化成令人满意的轮廓，并且相对于有机材料具有高蚀刻选择性。
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8.发明授权Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device 有权多孔膜形成组合物，组合物的制备方法，多孔膜和半导体器件公开(公告)号：US07402621B2
公开(公告)日：2008-07-22
申请号：US11041780
申请日：2005-01-24
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
IPC分类号： C08G77/06
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.
摘要翻译： 本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。 更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。 此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并加入交联性抑制剂以暂时终止交联性; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。
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公开(公告)号：US20070172759A1
公开(公告)日：2007-07-26
申请号：US11653839
申请日：2007-01-17
IPC分类号： G03F7/26
CPC分类号： G03F7/091 , G03F7/0752 , G03F7/0757
摘要： There is disclosed an antireflection film composition used for lithography comprising: at least a light absorbing silicone resin with mass average molecular weight of 30,000 or less in which components having molecular weight of less than 600 account for 5% or less of the whole resin; a first acid generator that is decomposed at a temperature of 200 degrees C. or less; and an organic solvent. There can be provided an antireflection film composition that prevents intermixing in the vicinity of the antireflection film/photoresist film interface, that provides a resist pattern over the antireflection film with almost vertical wall profile, and that provides less damage to an underlying layer of the antireflection film.
摘要翻译： 公开了用于光刻的抗反射膜组合物，其至少包含质均分子量为30,000以下的光吸收性有机硅树脂，其中分子量小于600的组分占全部树脂的5％以下; 在200℃以下的温度下分解的第一酸产生剂; 和有机溶剂。 可以提供防反射膜组合物，其防止在抗反射膜/光致抗蚀剂膜界面附近的混合，其在具有几乎垂直的壁轮廓的抗反射膜上提供抗蚀剂图案，并且对抗反射的下层提供较小的损伤 电影。
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公开(公告)号：US08822128B2
公开(公告)日：2014-09-02
申请号：US13604270
申请日：2012-09-05
申请人： Motoaki Iwabuchi , Tsutomu Ogihara
发明人： Motoaki Iwabuchi , Tsutomu Ogihara
CPC分类号： G03F7/004 , B01D37/025 , G03F7/075 , G03F7/16
摘要： The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法，至少包括：通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤，其中在过滤步骤中，使胶态溶胶通过过滤器 上游，将胶体粒子吸附到过滤器上，然后将光刻用抗蚀剂组合物通过过滤器，从而除去抗蚀剂组合物中的微细颗粒，以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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