Invention Grant
US08927358B2 Metal oxide semiconductor device having a predetermined threshold voltage and a method of making
有权
具有预定阈值电压的金属氧化物半导体器件及其制造方法
- Patent Title: Metal oxide semiconductor device having a predetermined threshold voltage and a method of making
- Patent Title (中): 具有预定阈值电压的金属氧化物半导体器件及其制造方法
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Application No.: US13286605Application Date: 2011-11-01
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Publication No.: US08927358B2Publication Date: 2015-01-06
- Inventor: Po-Chi Wu , Ryan Chia-Jen Chen
- Applicant: Po-Chi Wu , Ryan Chia-Jen Chen
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/441
- IPC: H01L21/441 ; H01L21/3205 ; H01L29/78 ; H01L21/02 ; H01L21/3213 ; H01L29/49 ; H01L29/66 ; H01L29/51
Abstract:
A metal-oxide-semiconductor (MOS) device having a selectable threshold voltage determined by the composition of an etching solution contacting a metal layer. The MOS device can be either a p-type or n-type MOS and the threshold voltage is selectable for both types of MOS devices. The etching solution is either an oxygen-containing solution or a fluoride-containing solution. The threshold voltage is selected by adjusting the flow rate of inert gases into an etching chamber to control the concentration of oxygen gas or nitrogen trifluoride.
Public/Granted literature
- US20130105915A1 METAL OXIDE SEMICONDUCTOR DEVICE HAVING A PREDETERMINED THRESHOLD VOLTAGE AND A METHOD OF MAKING Public/Granted day:2013-05-02
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