Invention Grant
- Patent Title: Intrench profile
- Patent Title (中): 精心设计
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Application No.: US13624724Application Date: 2012-09-21
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Publication No.: US08927390B2Publication Date: 2015-01-06
- Inventor: Kedar Sapre , Nitin Ingle , Jing Tang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762

Abstract:
A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.
Public/Granted literature
- US20130260533A1 INTRENCH PROFILE Public/Granted day:2013-10-03
Information query
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