Invention Grant
- Patent Title: Methods of forming rutile titanium dioxide
- Patent Title (中): 形成金红石二氧化钛的方法
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Application No.: US14079173Application Date: 2013-11-13
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Publication No.: US08927441B2Publication Date: 2015-01-06
- Inventor: Tsai-Yu Huang , Vishwanath Bhat , Vassil Antonov , Chris Carlson
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; H01L21/321 ; H01L49/02 ; H01L27/108

Abstract:
Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.
Public/Granted literature
- US20140065301A1 METHODS OF FORMING RUTILE TITANIUM DIOXIDE Public/Granted day:2014-03-06
Information query
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