发明授权
- 专利标题: Magnetic memory element
- 专利标题(中): 磁记忆元件
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申请号: US13601343申请日: 2012-08-31
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公开(公告)号: US08928055B2公开(公告)日: 2015-01-06
- 发明人: Daisuke Saida , Minoru Amano , Junichi Ito
- 申请人: Daisuke Saida , Minoru Amano , Junichi Ito
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2012-062938 20120320
- 主分类号: H01L27/22
- IPC分类号: H01L27/22 ; G11C11/15
摘要:
According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.
公开/授权文献
- US20130249024A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 公开/授权日:2013-09-26