- 专利标题： Semiconductor devices with heterojunction barrier regions and methods of fabricating same
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申请号： US12719412申请日： 2010-03-08
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公开(公告)号： US08928108B2公开(公告)日： 2015-01-06
- 发明人: Qingchun Zhang
- 申请人： Qingchun Zhang
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Withrow & Terranova, P.L.L.C.
- 主分类号： H01L29/47
- IPC分类号： H01L29/47 ; H01L29/872 ; H01L29/06 ; H01L29/165 ; H01L29/861 ; H01L29/16 ; H01L29/66
摘要：
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.