Invention Grant
- Patent Title: Shallow trench isolation
- Patent Title (中): 浅沟隔离
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Application No.: US14337170Application Date: 2014-07-21
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Publication No.: US08928112B2Publication Date: 2015-01-06
- Inventor: En-Chiuan Liou , Po-Chao Tsao , Chia-Jui Liang , Jia-Rong Wu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/06
Abstract:
A shallow trench isolation (STI) and method of forming the same is provided. The STI structure includes an upper insulating portion and a lower insulating portion, where the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled.
Public/Granted literature
- US20140332920A1 SHALLOW TRENCH ISOLATION Public/Granted day:2014-11-13
Information query
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