发明授权
US08930172B2 Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration
有权
用于光刻校准的参数敏感和正交仪表设计的方法和系统
- 专利标题: Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration
- 专利标题(中): 用于光刻校准的参数敏感和正交仪表设计的方法和系统
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申请号: US13128630申请日: 2009-11-10
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公开(公告)号: US08930172B2公开(公告)日: 2015-01-06
- 发明人: Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
- 申请人: Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 国际申请: PCT/US2009/063798 WO 20091110
- 国际公布: WO2010/054350 WO 20100514
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G03F1/00 ; G03F7/20 ; G03F1/44
摘要:
Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process, and which minimize degeneracy between model parameters, and thus maximize pattern coverage for parameter calibration. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
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