Methods and Systems for Parameter-Sensitive and Orthogonal Gauge Design for Lithography Calibration
    1.
    发明申请
    Methods and Systems for Parameter-Sensitive and Orthogonal Gauge Design for Lithography Calibration 有权
    用于光刻校准的参数敏感和正交仪表设计方法和系统

    公开(公告)号:US20110224956A1

    公开(公告)日:2011-09-15

    申请号:US13128630

    申请日:2009-11-10

    IPC分类号: G06F17/50

    摘要: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process, and which minimize degeneracy between model parameters, and thus maximize pattern coverage for parameter calibration. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

    摘要翻译: 根据本发明的方法提供用于设计用于校准用于模拟过程中的模型的计量模式的计算有效的技术,并且使模型参数之间的简并性最小化,并且因此使参数校准的模式覆盖最大化。 更具体地说,本发明涉及设计规格图案的方法,该图形模式可以用最小数量的量规完成覆盖参数变化,并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。 根据一些方面,根据本发明的方法包括改变模型参数空间的空间(基于CD灵敏度或Delta TCC),然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向,以及 确定最敏感的线宽/间距组合与最佳辅助功能放置,导致在模型参数空间中沿着该方向的最敏感的CD变化。

    Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration
    2.
    发明授权
    Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration 有权
    用于光刻校准的参数敏感和正交仪表设计的方法和系统

    公开(公告)号:US08930172B2

    公开(公告)日:2015-01-06

    申请号:US13128630

    申请日:2009-11-10

    摘要: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process, and which minimize degeneracy between model parameters, and thus maximize pattern coverage for parameter calibration. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

    摘要翻译: 根据本发明的方法提供用于设计用于校准用于模拟过程中的模型的计量模式的计算有效的技术,并且使模型参数之间的简并性最小化,并且因此使参数校准的模式覆盖最大化。 更具体地说,本发明涉及设计规格图案的方法,该图形模式可以用最小数量的量规完成覆盖参数变化,并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。 根据一些方面,根据本发明的方法包括改变模型参数空间的空间(基于CD灵敏度或Delta TCC),然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向,以及 确定最敏感的线宽/间距组合与最佳辅助功能放置,导致在模型参数空间中沿着该方向的最敏感的CD变化。

    Smart selection and/or weighting of parameters for lithographic process simulation

    公开(公告)号:US10025198B2

    公开(公告)日:2018-07-17

    申请号:US12615004

    申请日:2009-11-09

    IPC分类号: G06F17/50 G03F7/20

    摘要: The present invention generally relates to simulating a lithographic process, and more particularly to methods for smart selection and smart weighting when selecting parameters and/or kernels used in aerial image computation. According to one aspect, advantages in simulation throughput and/or accuracy can be achieved by selecting TCC kernels more intelligently, allowing highly accurate aerial images to be simulated using a relatively fewer number of TCC kernels than in the state of the art. In other words, the present invention allows for aerial images to be simulated with the same or better accuracy using much less simulation throughput than required in the prior art, all else being equal.

    Methods for performing model-based lithography guided layout design
    4.
    发明授权
    Methods for performing model-based lithography guided layout design 有权
    执行基于模型的光刻引导布局设计的方法

    公开(公告)号:US08732625B2

    公开(公告)日:2014-05-20

    申请号:US12663121

    申请日:2008-06-03

    IPC分类号: G06F17/50

    摘要: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.

    摘要翻译: 公开了创建有效的基于模型的子分辨率辅助特征(MB-SRAF)的方法。 创建SRAF指南图,其中每个设计目标边缘位置对于给定的场点投票,放置在该场点上的单像素SRAF是否将改善或降级过程窗口上的空中图像。 在一个实施例中,SRAF引导图用于确定SRAF放置规则和/或微调已经放置的SRAF。 SRAF引导图可以直接用于将SRAF放置在掩码布局中。 可以生成包括SRAF的掩模布局数据,其中根据SRAF引导图放置SRAF。 SRAF引导图可以包括图像,其中每个像素值指示如果像素被包括为子分辨率辅助特征的一部分,则像素是否将对掩模布局中的特征的边缘行为贡献积极。

    CONTENT-BASED TARGETED ONLINE ADVERTISEMENT
    5.
    发明申请
    CONTENT-BASED TARGETED ONLINE ADVERTISEMENT 审中-公开
    基于内容的目标在线广告

    公开(公告)号:US20140012671A1

    公开(公告)日:2014-01-09

    申请号:US13543705

    申请日:2012-07-06

    IPC分类号: G06Q30/02

    CPC分类号: G06Q30/0251

    摘要: A method of providing targeted online advertisement includes receiving a request for an ad impression to be provided to a user in a network environment. The request includes a first content and a second content. The method also includes, using a processor, determining a context of the first content and a context of the second content, determining a correlation between the context of the first content and the context of the second content, and identifying a plurality of ads as candidates for consideration. The method further includes, using the processor, ranking the plurality of identified ads, selecting an ad among the plurality of identified ads based at least in part on a result of the ranking, and providing the selected ad as the ad impression to be displayed to the user in response to receiving the request.

    摘要翻译: 提供目标在线广告的方法包括在网络环境中接收要向用户提供的广告印象的请求。 该请求包括第一内容和第二内容。 该方法还包括使用处理器确定第一内容的上下文和第二内容的上下文,确定第一内容的上下文与第二内容的上下文之间的相关性,以及将多个广告标识为候选 审议。 所述方法还包括:使用所述处理器对所述多个识别的广告进行排名,至少部分地基于所述排名的结果来选择所述多个识别的广告中的广告,并且将所选择的广告提供为要显示的广告展示 用户响应于接收到请求。

    Illumination optimization
    6.
    发明授权
    Illumination optimization 有权
    照明优化

    公开(公告)号:US08542340B2

    公开(公告)日:2013-09-24

    申请号:US13003294

    申请日:2009-07-07

    IPC分类号: G03B27/32 G03B27/68

    摘要: A method of optimizing an illumination pupil shape for a lithographic process comprises identifying a target pattern to be imaged by said lithographic process. It further comprises identifying at least one optimization point in said target pattern and identifying at least one design for manufacturing metric per optimization point. Additionally, it comprises selecting a set of illumination source points based on the identified at least one design for manufacturing metric and determining the illumination pupil shape based on the selected set of illumination source points.

    摘要翻译: 优化用于光刻工艺的照明光瞳形状的方法包括通过所述光刻工艺识别要成像的目标图案。 其还包括识别所述目标图案中的至少一个优化点,并且识别用于制造每个优化点的度量的至少一个设计。 另外,它包括基于所识别的用于制造度量的至少一个设计来选择一组照明源点,并且基于所选择的一组照明源点确定照明光瞳形状。

    Methods and systems for lithography process window simulation
    7.
    发明授权
    Methods and systems for lithography process window simulation 有权
    光刻工艺窗口模拟方法与系统

    公开(公告)号:US08527255B2

    公开(公告)日:2013-09-03

    申请号:US13494773

    申请日:2012-06-12

    IPC分类号: G06F17/50

    摘要: A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process.

    摘要翻译: 一种有效地模拟用于对具有多个特征进行成像的目标设计的光刻工艺的成像性能的方法。 该方法包括以下步骤:确定用于产生模拟图像的功能,其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像,其中模拟图像表示用于光刻工艺的目标设计的成像结果。

    Illumination Optimization
    8.
    发明申请
    Illumination Optimization 有权
    照明优化

    公开(公告)号:US20110116067A1

    公开(公告)日:2011-05-19

    申请号:US13003294

    申请日:2009-07-07

    IPC分类号: G03B27/54

    摘要: A method of optimizing an illumination pupil shape for a lithographic process 1 comprises identifying a target pattern (206) to be imaged by said lithographic process. It further comprises identifying at least one optimization point (262) in said target pattern and identifying at least one design for manufacturing metric (270) per optimization point. Additionally it comprises selecting a set of illumination source points (274) based on the identified at least one design for manufacturing metric and determining the illumination pupil shape (284) based on the selected set of illumination source points.

    摘要翻译: 优化用于光刻工艺1的照明光瞳形状的方法包括识别通过所述光刻工艺成像的目标图案(206)。 它还包括识别所述目标图案中的至少一个优化点(262),并且识别用于每个优化点的制造度量(270)的至少一个设计。 另外,它包括基于所识别的用于制造度量的所述至少一个设计来选择一组照明源点(274),并且基于所选择的一组照明源点确定照明光瞳形状(284)。

    Optimization of source, mask and projection optics
    9.
    发明授权
    Optimization of source, mask and projection optics 有权
    源,掩模和投影光学优化

    公开(公告)号:US08893060B2

    公开(公告)日:2014-11-18

    申请号:US13293114

    申请日:2011-11-09

    IPC分类号: G06F17/50 G03F1/70 G03F7/20

    摘要: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

    摘要翻译: 本发明的实施例提供了优化包括优化其中的投影光学元件的光刻投影设备的方法,并且优选地包括优化源,掩模和投影光学器件。 投影光学器件有时被广泛地称为“透镜”,因此联合优化过程可以被称为源掩模透镜优化(SMLO)。 SMLO对于现有的源掩码优化处理(SMO)是期望的,部分原因在于,通过引入投影光学器件的多个可调特性,优化中的投影光学器件可以导致更大的处理窗口。 投影光学元件可用于在光刻投影设备中形成波前,从而实现整个成像过程的像差控制。 根据本文的实施例,可以通过迭代地使用线性拟合算法或者使用使用传输交叉系数(TCC)的偏导数的泰勒级数扩展来加速优化。

    Methods and system for model-based generic matching and tuning
    10.
    发明授权
    Methods and system for model-based generic matching and tuning 有权
    基于模型的通用匹配和调优的方法和系统

    公开(公告)号:US08443307B2

    公开(公告)日:2013-05-14

    申请号:US12613285

    申请日:2009-11-05

    摘要: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

    摘要翻译: 本发明涉及一种用于调整光刻系统的方法,以便允许不同的光刻系统利用不需要进行试验和误差处理的已知工艺对不同的图案进行成像,以优化每个单独光刻的工艺和光刻系统设置 系统。 根据一些方面,本发明涉及一种用于任何模式的基于模型的通用匹配和调整的方法。 因此,它消除了对CD测量或量规选择的要求。 根据其它方面,本发明也是通用的,因为它可以与某些常规技术相结合,以在同时实现通用图案覆盖的同时为某些重要图案提供优异的性能。