Invention Grant
- Patent Title: Insulating pattern, method of forming the insulating pattern, light-emitting device, method of manufacturing the light-emitting device, and lighting device
- Patent Title (中): 绝缘图案，形成绝缘图案的方法，发光器件，制造发光器件的方法和照明器件
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Application No.: US14103251Application Date: 2013-12-11
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Publication No.: US08932097B2Publication Date: 2015-01-13
- Inventor: Yutaka Matsuda , Takahiro Sato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2011-038870 20110224
- Main IPC: H01J1/62
- IPC: H01J1/62 ; G03F9/00 ; G03F7/00 ; H01L33/36
Abstract:
A simple formation method of an insulating pattern having an eaves portion using one light-exposure mask is provided. As the formation method of an insulating pattern having an eaves portion, first, a first photosensitive organic layer is formed over a substrate, and then a first region is exposed to light with the use of a light-exposure mask, so that a leg portion is formed. After that, a second photosensitive organic layer is formed, the light-exposure mask is moved in the direction parallel to the substrate, and then a second region partly overlapping with the first region is exposed to light plural times, so that a stage portion is formed. The insulating pattern formed by this method may be applied to the light-emitting device or the lighting device.
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