发明授权
- 专利标题： Forming three dimensional isolation structures
- 专利标题（中）： 形成三维隔离结构
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申请号： US12952240申请日： 2010-11-23
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公开(公告)号： US08932935B2公开(公告)日： 2015-01-13
- 发明人: Enzo Carollo , Marcello Mariani , Sara Marelli , Luca Di Piazza
- 申请人： Enzo Carollo , Marcello Mariani , Sara Marelli , Luca Di Piazza
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dorsey & Whitney LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/762
摘要：
A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
公开/授权文献
- US20120126374A1 Forming Three Dimensional Isolation Structures 公开/授权日：2012-05-24
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