发明授权
- 专利标题: Metal/polysilicon gate trench power mosfet
- 专利标题(中): 金属/多晶硅栅沟槽功率MOSFET
-
申请号: US13545131申请日: 2012-07-10
-
公开(公告)号: US08933507B2公开(公告)日: 2015-01-13
- 发明人: Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
- 申请人: Chun-Wai Ng , Hsueh-Liang Chou , Po-Chih Su , Ruey-Hsin Liu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Associates, LLC
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
The present disclosure relates to a power MOSFET device having a relatively low resistance hybrid gate electrode that enables good switching performance. In some embodiments, the power MOSFET device has a semiconductor body. An epitaxial layer is disposed on the semiconductor body. A hybrid gate electrode, which controls the flow of electrons between a source electrode and a drain electrode, is located within a trench extending into the epitaxial layer. The hybrid gate electrode has an inner region having a low resistance metal, an outer region having a polysilicon material, and a barrier region disposed between the inner region and the outer region. The low resistance of the inner region provides for a low resistance to the hybrid gate electrode that enables good switching performance for the power MOSFET device.
公开/授权文献
- US20140015037A1 Novel Metal/Polysilicon Gate Trench Power Mosfet 公开/授权日:2014-01-16