- 专利标题： Schottky diode with buried layer in GaN materials
-
申请号： US13270641申请日： 2011-10-11
-
公开(公告)号： US08933532B2公开(公告)日： 2015-01-13
- 发明人: Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
- 申请人： Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
- 申请人地址： US CA San Jose
- 专利权人： Avogy, Inc.
- 当前专利权人： Avogy, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/808 ; H01L29/66 ; H01L29/20 ; H01L29/868 ; H01L29/40 ; H01L29/06
摘要：
A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.
公开/授权文献
- US20130087879A1 SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS 公开/授权日：2013-04-11
信息查询
IPC分类:
