公开(公告)号：US09260616B2

公开(公告)日：2016-02-16

申请号：US13408807

申请日：2012-02-29

Applicant: Lianhui Cong ,  Daniel Francis Gloster ,  Paul Andrew Edwards

Inventor： Lianhui Cong ,  Daniel Francis Gloster ,  Paul Andrew Edwards

IPC: C09D11/101 ,  B41J2/21 ,  B41J2/01 ,  C09D11/322

CPC classification number: C09D11/101 ,  B41J2/01 ,  B41J2/2107 ,  C09D11/322

Abstract: Gloss-controllable, radiation-curable inkjet inks cure quickly with minimal radiation exposure, enabling high-printing speed and low surface heating with controllable gloss on the printed image. Ink gloss can be controlled by varying the pinning energy to create the printed images with varied gloss from 10 to 100 gloss unit at 85° gloss measurement angle. After curing, the ink remains flexible on the surface, giving excellent performance on a wide range of surfaces, greatly expanding the range of applications for the ink. A gloss-controllable, radiation-curable inkjet ink may include approximately 8-18% of photo-initiators responding to UVA and UVV (UVA: 320-400 nm wavelengths, UVV: 400-450 nm wavelengths) radiation to initiate free radicals and optionally, other types of photo-initiators and approximately 60-85% of highly flexible mono-functional monomers. The resulting ink is of low viscosity, having excellent flexibility after curing, is low-odor and permits excellent print quality and high productivity on a wide range of surfaces.

Abstract translation: 光泽可控的可辐射固化喷墨油墨以最小的辐射曝光快速固化，可实现高印刷速度和低表面加热，并且可印刷图像具有可控光泽度。 可以通过改变钉扎能量来控制油墨光泽度，以85°光泽度测量角度创建10至100光泽单位的不同光泽度的印刷图像。 固化后，油墨在表面上保持柔性，在广泛的表面上提供优异的性能，大大扩大了油墨的应用范围。 光泽可控的可辐射固化的喷墨油墨可以包括大约8-18％的响应于UVA和UVV（UVA：320-400nm波长，UVV：400-450nm波长）辐射的光引发剂以引发自由基和任选地 ，其他类型的光引发剂和约60-85％的高度柔性单官能单体。 所得油墨的粘度低，固化后具有优异的柔韧性，具有低气味，并且在宽范围的表面上具有优异的印刷质量和高生产率。

公开(公告)号：US20140048903A1

公开(公告)日：2014-02-20

申请号：US13586330

申请日：2012-08-15

Applicant: Andrew Edwards ,  Hui Nie ,  Isik Kizilyalli ,  Dave Bour

Inventor： Andrew Edwards ,  Hui Nie ,  Isik Kizilyalli ,  Dave Bour

IPC: H01L29/872 ,  H01L21/20

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/8083

Abstract: A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming one or more p-type regions in the n-type GaN epitaxial layer by using a first ion implantation. At least one of the one or more p-type regions includes an edge termination structure.

Abstract translation: 一种用于制造氮化镓（GaN）材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底，形成耦合到n型GaN的第一表面的n型GaN外延层 并且通过使用第一离子注入在n型GaN外延层中形成一个或多个p型区域。 一个或多个p型区域中的至少一个包括边缘终端结构。

公开(公告)号：US08558242B2

公开(公告)日：2013-10-15

申请号：US13315705

申请日：2011-12-09

Applicant: Richard J. Brown ,  Hui Nie ,  Andrew Edwards ,  Isik Kizilyalli ,  David Bour ,  Thomas Prunty ,  Linda Romano ,  Madhan Raj

Inventor： Richard J. Brown ,  Hui Nie ,  Andrew Edwards ,  Isik Kizilyalli ,  David Bour ,  Thomas Prunty ,  Linda Romano ,  Madhan Raj

IPC: H01L29/20

CPC classification number: H01L29/7813 ,  H01L29/2003 ,  H01L29/41775 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7828

Abstract: A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers.

Abstract translation: 半导体结构包括具有顶表面和相对底表面的III族氮化物衬底和与III族氮化物衬底的顶表面耦合的第一导电类型的第一III族氮化物层。 半导体结构还包括沿着垂直方向耦合到第一III族氮化物层的第二导电类型的第二III族氮化物层，以及沿着沿着垂直方向耦合到第二III族氮化物层的第三导电类型的第三III族氮化物层 垂直方向 半导体结构还包括延伸穿过第三III族氮化物层的一部分到第一III族氮化物层的第一沟槽，延伸穿过第三III族氮化物层的另一部分到第二III族氮化物层的第二沟槽，以及 耦合到第二和第三III族氮化物层的第一金属层。

公开(公告)号：US20130222499A1

公开(公告)日：2013-08-29

申请号：US13408807

申请日：2012-02-29

Applicant: Lianhui CONG ,  Daniel Francis GLOSTER ,  Paul Andrew EDWARDS

Inventor： Lianhui CONG ,  Daniel Francis GLOSTER ,  Paul Andrew EDWARDS

IPC: B41J2/01 ,  C09D11/10

CPC classification number: C09D11/101 ,  B41J2/01 ,  B41J2/2107 ,  C09D11/322

Abstract: Gloss-controllable, radiation-curable inkjet inks cure quickly with minimal radiation exposure, enabling high-printing speed and low surface heating with controllable gloss on the printed image. Ink gloss can be controlled by varying the pinning energy to create the printed images with varied gloss from 10 to 100 gloss unit at 85° gloss measurement angle. After curing, the ink remains flexible on the surface, giving excellent performance on a wide range of surfaces, greatly expanding the range of applications for the ink. A gloss-controllable, radiation-curable inkjet ink may include approximately 8-18% of photo-initiators responding to UVA and UW (UVA: 320-400 nm wavelengths, UW: 400-450 nm wavelengths) radiation to initiate free radicals and optionally, other types of photo-initiators and approximately 60-85% of highly flexible mono-functional monomers. The resulting ink is of low viscosity, having excellent flexibility after curing, is low-odor and permits excellent print quality and high productivity on a wide range of surfaces.

Abstract translation: 光泽可控的可辐射固化喷墨油墨以最小的辐射曝光快速固化，可实现高印刷速度和低表面加热，并且可印刷图像具有可控光泽度。 可以通过改变钉扎能量来控制油墨光泽度，以85°光泽度测量角度创建10至100光泽单位的不同光泽度的印刷图像。 固化后，油墨在表面上保持柔性，在广泛的表面上提供优异的性能，大大扩大了油墨的应用范围。 光泽可控的可辐射固化的喷墨油墨可以包括大约8-18％的响应于UVA和UW（UVA：320-400nm波长，UW：400-450nm波长）辐射的光引发剂以引发自由基和任选地 ，其他类型的光引发剂和约60-85％的高度柔性单官能单体。 所得油墨的粘度低，固化后具有优异的柔韧性，具有低气味，并且在宽范围的表面上具有优异的印刷质量和高生产率。

公开(公告)号：US20130146885A1

公开(公告)日：2013-06-13

申请号：US13315705

申请日：2011-12-09

Applicant: Richard J. Brown ,  Hui Nei ,  Andrew Edwards ,  Isik Kizilyalli ,  David Bour ,  Thomas Prunty ,  Linda Romano ,  Madhan Raj

Inventor： Richard J. Brown ,  Hui Nei ,  Andrew Edwards ,  Isik Kizilyalli ,  David Bour ,  Thomas Prunty ,  Linda Romano ,  Madhan Raj

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L29/7813 ,  H01L29/2003 ,  H01L29/41775 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7828

Abstract: A semiconductor structure includes a III-nitride substrate having a top surface and an opposing bottom surface and a first III-nitride layer of a first conductivity type coupled to the top surface of the III-nitride substrate. The semiconductor structure also includes a second III-nitride layer of a second conductivity type coupled to the first III-nitride layer along a vertical direction and a third III-nitride layer of a third conductivity type coupled to the second III-nitride layer along the vertical direction. The semiconductor structure further includes a first trench extending through a portion of the third III-nitride layer to the first III-nitride layer, a second trench extending through another portion of the third III-nitride layer to the second III-nitride layer, and a first metal layer coupled to the second and the third III-nitride layers.

Abstract translation: 半导体结构包括具有顶表面和相对底表面的III族氮化物衬底和与III族氮化物衬底的顶表面耦合的第一导电类型的第一III族氮化物层。 半导体结构还包括沿着垂直方向耦合到第一III族氮化物层的第二导电类型的第二III族氮化物层，以及沿着沿着垂直方向耦合到第二III族氮化物层的第三导电类型的第三III族氮化物层 垂直方向 半导体结构还包括延伸穿过第三III族氮化物层的一部分到第一III族氮化物层的第一沟槽，延伸穿过第三III族氮化物层的另一部分到第二III族氮化物层的第二沟槽，以及 耦合到第二和第三III族氮化物层的第一金属层。

公开(公告)号：US20130087879A1

公开(公告)日：2013-04-11

申请号：US13270641

申请日：2011-10-11

Applicant: Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

Inventor： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC: H01L29/47 ,  H01L21/20

CPC classification number: H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

Abstract: A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.

公开(公告)号：US20110037807A1

公开(公告)日：2011-02-17

申请号：US12913617

申请日：2010-10-27

Applicant: Paul Andrew EDWARDS ,  John Hennessy ,  Frank Bruck

Inventor： Paul Andrew EDWARDS ,  John Hennessy ,  Frank Bruck

IPC: B41J23/00

CPC classification number: B41J11/008 ,  B41J25/308

Abstract: An ink jet printer for printing on a substrate comprising a first print head outputting ink and defining an ink meniscus; a platen operable to carry the substrate; a support structure; and a print head mechanism coupled to the support structure and carrying the first print head. The print head mechanism moving the first print head relative to the platen. A controller controls the print head mechanism such that at least one of a predetermined acceleration and predetermined deceleration of the print head mechanism is achieved such that the ink meniscus is operably maintained.

Abstract translation: 一种用于在基片上进行打印的喷墨打印机，包括：一个第一打印头，用于输出墨水并限定墨水弯月面; 可操作地承载衬底的压板; 支撑结构; 以及连接到支撑结构并承载第一打印头的打印头机构。 打印头机构使第一打印头相对于压板移动。 控制器控制打印头机构，使得实现打印头机构的预定加速度和预定减速度中的至少一个，从而可操作地保持油墨弯液面。

公开(公告)号：US20100140665A1

公开(公告)日：2010-06-10

申请号：US11839030

申请日：2007-08-15

Applicant: Sameer Singbal ,  Andrew Edwards ,  Chul H. Park ,  Quinn Martin ,  Isik Kizilyalli

Inventor： Sameer Singbal ,  Andrew Edwards ,  Chul H. Park ,  Quinn Martin ,  Isik Kizilyalli

IPC: H01L27/08 ,  H01L21/60 ,  H01L29/20 ,  H01L21/77 ,  H01L23/52

CPC classification number: H01L27/0605 ,  H01L23/4824 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/78681 ,  H01L2924/0002 ,  H01L2924/01322 ,  H01L2924/10158 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

Abstract translation: 描述了与装置相关的氮化镓材料装置和方法。 这些器件可以设计成提供增强的热传导和降低的热阻。 通过和移出氮化镓器件的增加的热传导增强了器件的可操作性，包括提供优异的RF操作，可靠性和寿命。

公开(公告)号：US20080105880A1

公开(公告)日：2008-05-08

申请号：US11962259

申请日：2007-12-21

Applicant: Andrew Edwards ,  Steven Binari ,  Jeffrey Mittereder

Inventor： Andrew Edwards ,  Steven Binari ,  Jeffrey Mittereder

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

Abstract: This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.

Abstract translation: 本发明涉及一种电子设备及其制造方法。 该器件是异质结晶体管，特别是高电子迁移率晶体管，其特征在于存在2°通道。 本发明的晶体管包含AlGaN势垒和GaN缓冲器，其中通道设置在阻挡层和缓冲器的界面处。 用氨等离子体进行表面处理与未处理的表面相似。 该方法涉及在钝化之前用氨等离子体处理器件，以将器件的可靠性延长超过约300小时的操作时间，该器件通常为2°AlGaN / GaN高电子迁移率晶体管，其基本上 没有门滞，并且基本上没有rf功率输出降级。

公开(公告)号：US20070290133A1

公开(公告)日：2007-12-20

申请号：US11100800

申请日：2005-04-06

Applicant: Edward Reber ,  James Jewell ,  Kenneth Rohde ,  Edward Seabury ,  Larry Blackwood ,  Andrew Edwards ,  Kurt Derr

Inventor： Edward Reber ,  James Jewell ,  Kenneth Rohde ,  Edward Seabury ,  Larry Blackwood ,  Andrew Edwards ,  Kurt Derr

IPC: G01V5/10 ,  G01J5/02

CPC classification number: G01V5/0008 ,  G01V5/0069

Abstract: A method of detecting explosives in a vehicle includes providing a first rack on one side of the vehicle, the rack including a neutron generator and a plurality of gamma ray detectors; providing a second rack on another side of the vehicle, the second rack including a neutron generator and a plurality of gamma ray detectors; providing a control system, remote from the first and second racks, coupled to the neutron generators and gamma ray detectors; using the control system, causing the neutron generators to generate neutrons; and performing gamma ray spectroscopy on spectra read by the gamma ray detectors to look for a signature indicative of presence of an explosive. Various apparatus and other methods are also provided.

Abstract translation: 一种在车辆中检测爆炸物的方法包括在车辆的一侧提供第一齿条，所述齿条包括中子发生器和多个伽马射线探测器; 在所述车辆的另一侧上提供第二机架，所述第二机架包括中子发生器和多个伽马射线探测器; 提供远离第一和第二机架的控制系统，耦合到中子发生器和伽马射线探测器; 使用控制系统，使中子发生器产生中子; 并对由γ射线检测器读取的光谱执行伽马射线光谱，以寻找指示爆炸物存在的签名。 还提供了各种装置和其他方法。