发明授权
- 专利标题: Semiconductor sensor reliability
- 专利标题(中): 半导体传感器的可靠性
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申请号: US12968632申请日: 2010-12-15
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公开(公告)号: US08935143B2公开(公告)日: 2015-01-13
- 发明人: Moon J. Kim
- 申请人: Moon J. Kim
- 申请人地址: KR Seoul
- 专利权人: IP Cube Partners Co., Ltd.
- 当前专利权人: IP Cube Partners Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: LaBatt, LLC
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G06G7/62 ; H01L23/58 ; H01L29/10 ; G01R31/28
摘要:
Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system. The quantity and location of the sensors are optimized to have maximum sensitivity to known process variations. In general, the sensor models a behavior (e.g., aging process) of the location (e.g., functional block) in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted.
公开/授权文献
- US20120158392A1 SEMICONDUCTOR SENSOR RELIABILITY 公开/授权日:2012-06-21
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