Invention Grant
- Patent Title: Photo-resist with floating acid
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Application No.: US13791992Application Date: 2013-03-09
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Publication No.: US08936903B2Publication Date: 2015-01-20
- Inventor: Ching-Yu Chang , Ming-Feng Shieh , Wen-Hung Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/004

Abstract:
A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.
Public/Granted literature
- US20140255850A1 Photo-Resist with Floating Acid Public/Granted day:2014-09-11
Information query
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