发明授权
- 专利标题: Method for manufacturing semiconductor light-emitting device
- 专利标题(中): 半导体发光元件的制造方法
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申请号: US13636392申请日: 2011-03-14
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公开(公告)号: US08936950B2公开(公告)日: 2015-01-20
- 发明人: Naoki Nakajo , Masao Kamiya , Akihiro Honma
- 申请人: Naoki Nakajo , Masao Kamiya , Akihiro Honma
- 申请人地址: JP Kiyosu-Shi, Aichi-Ken
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Kiyosu-Shi, Aichi-Ken
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2010-066087 20100323
- 国际申请: PCT/JP2011/001472 WO 20110314
- 国际公布: WO2011/118149 WO 20110929
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L33/42 ; H01L33/44 ; H01L33/46 ; H01L33/00
摘要:
To improve light emission efficiency and reliability.A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.