公开(公告)号：US08936950B2

公开(公告)日：2015-01-20

申请号：US13636392

申请日：2011-03-14

申请人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

发明人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

IPC分类号： H01L21/00 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： To improve light emission efficiency and reliability.A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

摘要翻译： 提高发光效率和可靠性。 在第二半导体层108的整个顶表面上形成透明导电膜10，并且在其上施加光刻胶。 当去除与第一半导体层104的电极形成部分16对应的上表面上的光致抗蚀剂时，除去光致抗蚀剂以在要去除的部分的边界处逐渐变薄。 使用剩余的光致抗蚀剂作为掩模对透明导电膜进行湿式蚀刻，以暴露第二半导体层的一部分。 使用剩余的光致抗蚀剂和透明导电膜作为掩模进行干法蚀刻，以暴露形成第一半导体层的一部分的电极。 在使用剩余光刻胶作为掩模的干蚀刻中曝光的透明导电膜的一部分被湿式蚀刻。 剩下的光刻胶被消除。

公开(公告)号：US20130011953A1

公开(公告)日：2013-01-10

申请号：US13636392

申请日：2011-03-14

申请人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

发明人： Naoki Nakajo ,  Masao Kamiya ,  Akihiro Honma

IPC分类号： H01L33/32

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： To improve light emission efficiency and reliability.A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.

摘要翻译： 提高发光效率和可靠性。 在第二半导体层108的整个顶表面上形成透明导电膜10，并且在其上施加光刻胶。 当去除与第一半导体层104的电极形成部分16对应的上表面上的光致抗蚀剂时，除去光致抗蚀剂以在要除去的部分的边界逐渐变薄。 使用剩余的光致抗蚀剂作为掩模对透明导电膜进行湿式蚀刻，以暴露第二半导体层的一部分。 使用剩余的光致抗蚀剂和透明导电膜作为掩模进行干法蚀刻，以暴露形成第一半导体层的一部分的电极。 在使用剩余光刻胶作为掩模的干蚀刻中曝光的透明导电膜的一部分被湿式蚀刻。 剩下的光刻胶被消除。

公开(公告)号：US08247823B2

公开(公告)日：2012-08-21

申请号：US12923384

申请日：2010-09-17

申请人： Kosuke Yahata ,  Naoki Nakajo ,  Masao Kamiya

发明人： Kosuke Yahata ,  Naoki Nakajo ,  Masao Kamiya

IPC分类号： H01L27/15 ,  H01L27/148 ,  H01L21/00

CPC分类号： H01L33/382 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a planar direction.

摘要翻译： 发光元件包括：半导体层叠结构，包括第一半导体层，发光层和第二半导体层，设置在半导体层叠结构上的绝缘层，第一布线，包括第一垂直导电部分和第一平面 导电部分并且电连接到第一半导体层，第一垂直导电部分在垂直方向上在绝缘层，发光层和第二半导体层的内部延伸，并且第一平面导电部分在绝缘层内部延伸 平面方向，第二布线包括第二垂直导电部分和第二平面导电部分，并且电连接到第二半导体层，第二垂直导电部分在垂直方向上延伸在绝缘层内部，第二平面导电部分延伸 里面 e绝缘层在平面方向上。

公开(公告)号：US07244957B2

公开(公告)日：2007-07-17

申请号：US11063747

申请日：2005-02-24

申请人： Naoki Nakajo ,  Masao Kamiya ,  Tetsuya Taki

发明人： Naoki Nakajo ,  Masao Kamiya ,  Tetsuya Taki

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/32

摘要： In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.

摘要翻译： 在从具有Mg掺杂的Mg掺杂的p型GaN制成的III族氮化物化合物半导体投影部150的半导体平面的高度为1.5μm的III族氮化物化合物半导体发光装置中， 8×10 9 / cm 3，并且通过选择性生长形成，形成在p型接触层（第二p层）108上。 并且通过金属沉积在其上形成透光性电极110。 III族氮化物化合物半导体投影部150形成用于输出光的坚固的表面，并且实际临界角被加宽，这能够提高发光效率。 并且由于不采用蚀刻来形成耐磨性，所以驱动电压不增加。

公开(公告)号：US20110068359A1

公开(公告)日：2011-03-24

申请号：US12923384

申请日：2010-09-17

申请人： Kosuke Yahata ,  Naoki Nakajo ,  Masao Kamiya

发明人： Kosuke Yahata ,  Naoki Nakajo ,  Masao Kamiya

IPC分类号： H01L33/60

CPC分类号： H01L33/382 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a planar direction.

摘要翻译： 发光元件包括：半导体层叠结构，包括第一半导体层，发光层和第二半导体层，设置在半导体层叠结构上的绝缘层，第一布线，包括第一垂直导电部分和第一平面 导电部分并且电连接到第一半导体层，第一垂直导电部分在垂直方向上在绝缘层，发光层和第二半导体层的内部延伸，并且第一平面导电部分在绝缘层内部延伸 平面方向，第二布线包括第二垂直导电部分和第二平面导电部分，并且电连接到第二半导体层，第二垂直导电部分在垂直方向上延伸在绝缘层内部，第二平面导电部分延伸 里面 e绝缘层在平面方向上。

公开(公告)号：US20050277218A1

公开(公告)日：2005-12-15

申请号：US11063747

申请日：2005-02-24

申请人： Naoki Nakajo ,  Masao Kamiya ,  Tetsuya Taki

发明人： Naoki Nakajo ,  Masao Kamiya ,  Tetsuya Taki

IPC分类号： H01L21/205 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L21/00

CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/32

摘要： In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.

摘要翻译： 在从具有Mg掺杂的Mg掺杂的p型GaN制成的III族氮化物化合物半导体投影部150的半导体平面的高度为1.5μm的III族氮化物化合物半导体发光装置中， 8×10 9 / cm 3，并且通过选择性生长形成，形成在p型接触层（第二p层）108上。 并且通过金属沉积在其上形成透光性电极110。 III族氮化物化合物半导体投影部150形成用于输出光的坚固的表面，并且实际临界角被加宽，这能够提高发光效率。 并且由于不采用蚀刻来形成耐磨性，所以驱动电压不增加。

公开(公告)号：US20090039374A1

公开(公告)日：2009-02-12

申请号：US12222366

申请日：2008-08-07

申请人： Kosuke Yahata ,  Naoki Nakajo

发明人： Kosuke Yahata ,  Naoki Nakajo

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/44 ,  H01L33/46

摘要： In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.

摘要翻译： 在本发明的倒装型发光元件中，n型接触电极14形成在以梳齿形状露出的n层11上，在整个表面上形成由ITO制成的透光电极15 在透光电极15上以规定的间隔形成p层13的上表面和20个焊盘电极16.焊盘电极16的平面形状具有从圆形中心部16a以十字形突出的四个分支16b 以及通过分支16b彼此连接的相邻的焊盘电极16。

公开(公告)号：US20070165278A1

公开(公告)日：2007-07-19

申请号：US11654969

申请日：2007-01-17

申请人： Naoki Nakajo

发明人： Naoki Nakajo

IPC分类号： G06K15/00

CPC分类号： B41J3/4071

摘要： A printing apparatus is operable to read out data from a first recording medium and to execute printing based on the read-out data. A command receiver is adapted to receive, from an operator, a command for executing backup of the data in the first recording medium on a second recording medium. A message provider is operable to provide a message for prompting the operator to execute printing on a surface of the second recording medium when the command receiver receives the command.

摘要翻译： 打印装置可操作以从第一记录介质读出数据，并根据读出的数据执行打印。 命令接收器适于从操作者接收用于在第二记录介质上执行第一记录介质中的数据备份的命令。 当命令接收器接收到命令时，消息提供者可操作地提供用于提示操作者在第二记录介质的表面上执行打印的消息。

公开(公告)号：US07096873B2

公开(公告)日：2006-08-29

申请号：US09935699

申请日：2001-08-24

申请人： Toshiya Uemura ,  Naoki Nakajo

发明人： Toshiya Uemura ,  Naoki Nakajo

IPC分类号： B08B5/00

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086 ,  H01L33/0095 ,  Y10S438/906

摘要： A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semiconductor. The ultraviolet rays cause a reaction of oxygen molecules to form stimulated oxygen atoms having a strong oxidative power at the surface.

摘要翻译： 制造III族氮化物化合物半导体器件的方法包括用紫外线照射晶片的表面，从而从晶片的表面清洁抗蚀剂残留物，该表面包括III族氮化物化合物半导体。 紫外线引起氧分子的反应，形成在表面具有强氧化能力的受激氧原子。

公开(公告)号：US08793590B2

公开(公告)日：2014-07-29

申请号：US13437255

申请日：2012-04-02

申请人： Naoki Nakajo

发明人： Naoki Nakajo

IPC分类号： G06F3/048 ,  G06Q10/10

CPC分类号： G06F3/048 ,  G06F21/6227 ,  G06Q10/109 ,  G06Q10/1093 ,  Y10S715/963

摘要： An event setting section sets calendars or accounts based on operation contents from an operation input receiving unit, and stores a list of the set calendars or accounts in a schedule database. In addition, the event setting section sets events in a calendar based on operation contents from the operation input receiving unit, and stores a list of the set events in the schedule database. An image correlation section stores image data supplied from an image input unit in an image database, and correlates (shares) the image data with the event list stored in the schedule database based on photographing information (photographing time, camera ID, and the like) accompanied by the image data.

摘要翻译： 事件设置部分基于来自操作输入接收单元的操作内容设置日历或帐户，并将所设置的日历或帐户的列表存储在日程表数据库中。 此外，事件设置部分基于来自操作输入接收单元的操作内容来设置日历中的事件，并将所设置的事件的列表存储在调度数据库中。 图像相关部分将从图像输入单元提供的图像数据存储在图像数据库中，并且基于拍摄信息（拍摄时间，相机ID等）将图像数据与存储在调度数据库中的事件列表相关联（共享） 伴随着图像数据。