发明授权
- 专利标题： Non-volatile storage with read process that reduces disturb
- 专利标题（中）： 具有减少干扰的读取过程的非易失性存储
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申请号： US13783781申请日： 2013-03-04
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公开(公告)号： US08937835B2公开(公告)日： 2015-01-20
- 发明人: Bo Lei , Jun Wan , Feng Pan
- 申请人： Sandisk Technologies Inc.
- 申请人地址： US TX Plano
- 专利权人： Sandisk Technologies Inc.
- 当前专利权人： Sandisk Technologies Inc.
- 当前专利权人地址： US TX Plano
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/26 ; G11C11/56 ; G11C16/34
摘要：
A apparatus and process for reading data from non-volatile storage includes applying a read compare signal to a selected data memory cell of a NAND string, applying a first set of one or more read pass voltages to unselected data memory cells at both ends of the NAND string and applying a second set of one or more read pass voltages to unselected data memory cells between both ends of the NAND string and on both sides of the selected data memory cell. The second set of one or more read pass voltages are all higher than the first set of one or more read pass voltages.
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