Invention Grant
US08940592B2 Memories and methods of forming thin-film transistors using hydrogen plasma doping
有权
使用氢等离子体掺杂形成薄膜晶体管的记忆和方法
- Patent Title: Memories and methods of forming thin-film transistors using hydrogen plasma doping
- Patent Title (中): 使用氢等离子体掺杂形成薄膜晶体管的记忆和方法
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Application No.: US13739679Application Date: 2013-01-11
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Publication No.: US08940592B2Publication Date: 2015-01-27
- Inventor: Shu Qin , Haitao Liu , Zhenyu Lu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L29/66 ; H01J37/32
Abstract:
Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled.
Public/Granted literature
- US20140197416A1 MEMORIES AND METHODS OF FORMING THIN-FILM TRANSISTORS USING HYDROGEN PLASMA DOPING Public/Granted day:2014-07-17
Information query
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