发明授权
- 专利标题： Semiconductor integrated circuit device and method of fabricating the same
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US14290700申请日： 2014-05-29
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公开(公告)号： US08940611B2公开(公告)日： 2015-01-27
- 发明人: Weon-Hong Kim , Min-Woo Song , Jung-Min Park
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2009-0012509 20090216
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L49/02
摘要：
A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer.
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