Invention Grant
- Patent Title: Method for surface treatment on a metal oxide and method for preparing a thin film transistor
- Patent Title (中): 金属氧化物表面处理方法及薄膜晶体管的制造方法
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Application No.: US13698558Application Date: 2012-08-22
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Publication No.: US08940647B2Publication Date: 2015-01-27
- Inventor: Xiaodi Liu , Jun Cheng
- Applicant: Xiaodi Liu , Jun Cheng
- Applicant Address: CN Beijing
- Assignee: Boe Technology Group Co., Ltd.
- Current Assignee: Boe Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201110447901 20111228
- International Application: PCT/CN2012/080477 WO 20120822
- International Announcement: WO2013/097472 WO 20130704
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; H01L21/425 ; H01L21/443 ; H01L21/465 ; H01L29/66 ; H01L29/786 ; H01L31/0224
Abstract:
Embodiments of the present invention provide a method for surface treatment on a metal oxide and a method for preparing a thin film transistor. The method for surface treatment on a metal oxide comprises: utilizing plasma to perform a surface treatment on a device to be processed; the plasma comprises a mixture gas of an F-based gas and O2, and the device to be processed is a metal oxide or a manufactured article coated with a metal oxide. The embodiments provided by the present invention can reduce the contact resistance between a metal oxide and other electrodes, and improve the effect of ohmic contact of the metal oxide.
Public/Granted literature
- US20130171836A1 METHOD FOR SURFACE TREATMENT ON A METAL OXIDE AND METHOD FOR PREPARING A THIN FILM TRANSISTOR Public/Granted day:2013-07-04
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