发明授权
- 专利标题： Semiconductor light emitting element
- 专利标题（中）： 半导体发光元件
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申请号： US13394543申请日： 2010-08-23
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公开(公告)号： US08941136B2公开(公告)日： 2015-01-27
- 发明人: Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
- 申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
- 申请人地址： JP Nagoya-Shi, Aichi
- 专利权人： El-Seed Corporation
- 当前专利权人： El-Seed Corporation
- 当前专利权人地址： JP Nagoya-Shi, Aichi
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2009-205931 20090907
- 国际申请： PCT/JP2010/064154 WO 20100823
- 国际公布： WO2011/027679 WO 20110310
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/22 ; H01L33/40
摘要：
A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.
公开/授权文献
- US20120228656A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 公开/授权日：2012-09-13
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